N-channel FETs and MOSFETs

N-channel transistor, 10.6A, TO-220, TO-220AC, 600V. Ic(T=100°C): 10.6A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 550pF. Cost): 62pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Collector current: 20A. Ic(pulse): 40A. Marking on the case: G10N60A. Number of terminals: 3. Pd (Power Dissipation, Max): 92W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 178 ns. Td(on): 28 ns. Technology: Fast IGBT in NPT technology. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Function: Motor controls, Inverter. CE diode: no. Germanium diode: no

N-channel transistor, 15A, TO-220, TO-220AC, 1200V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 1200V. RoHS: yes. C(in): 1250pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 3. Collector current: 30A. Ic(pulse): 52A. Marking on the case: G15N120. Number of terminals: 3. Pd (Power Dissipation, Max): 198W. Assembly/installation: PCB through-hole mounting. Td(off): 580 ns. Td(on): 18 ns. Technology: Fast IGBT in NPT technology. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.5V. Maximum saturation voltage VCE(sat): 3.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Function: Motor controls, Inverter, SMPS. CE diode: no. Germanium diode: no

N-channel transistor, 30A, TO-220, TO-220AC, 600V. Ic(T=100°C): 30A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. RoHS: yes. C(in): 1600pF. Cost): 150pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 3. Collector current: 41A. Ic(pulse): 112A. Marking on the case: G30N60. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. Assembly/installation: PCB through-hole mounting. Td(off): 291 ns. Td(on): 44 ns. Technology: Fast IGBT in NPT technology. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Function: Motor controls, Inverter. CE diode: no. Germanium diode: no

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 3.6A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 2.2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 235pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 3.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L6. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.057 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 305pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, MS-012, 60V, 2.3A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.192 Ohms @ 1.7A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 1.66W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 8A, 10A, 10A, 0.013 Ohms, SO, SO-8, 30 v. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.013 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Quantity per case: 1

N-channel transistor, PCB soldering (SMD), SO8, MS-012, 30 v, 7.5A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 7.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4410BDY. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0135 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 2000pF. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 10.5A, 13.5A, 13.5A, 0.008 Ohms, SO, SO-8, 30 v. ID (T=100°C): 10.5A. ID (T=25°C): 13.5A. Idss (max): 13.5A. On-resistance Rds On: 0.008 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 50A. Marking on the case: 4420AP. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Quantity per case: 1

N-channel transistor, 26A, 32A, 10uA, 17m Ohms, SO, SO-8, 12V. ID (T=100°C): 26A. ID (T=25°C): 32A. Idss (max): 10uA. On-resistance Rds On: 17m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 12V. C(in): 12350pF. Cost): 2775pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 84 ns. Type of transistor: MOSFET. Function: Power MOSFET. Id(imp): 70A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 7.8W. Assembly/installation: surface-mounted component (SMD). Td(off): 240 ns. Td(on): 38 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Quantity per case: 1. Spec info: Id--40...50A t=10s with FR4 board. G-S Protection: no

N-channel transistor, 4.8A, 6A, 20uA, 0.026 Ohms, SO, SO-8, 80V. ID (T=100°C): 4.8A. ID (T=25°C): 6A. Idss (max): 20uA. On-resistance Rds On: 0.026 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 80V. Channel type: N. Type of transistor: MOSFET. Function: Power MOSFET. Id(imp): 40A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 12.5 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 5.2A, 6.2A, 20uA, 0.026 Ohms, SO, SO-8, 80V. ID (T=100°C): 5.2A. ID (T=25°C): 6.2A. Idss (max): 20uA. On-resistance Rds On: 0.026 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 80V. Channel type: N. Type of transistor: MOSFET. Function: Power MOSFET. Id(imp): 40Ap. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 12.5 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SO8, MS-012, 30V/-30V, 3.7A/-3A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.7A/-3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4532ADY-T1-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.053 Ohms/0.08 Ohms @ 4.9/-3.9A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Switch-on time ton [nsec.]: 12 ns/8 ns. Switch-off delay tf[nsec.]: 23/21 ns. Ciss Gate Capacitance [pF]: 500pF. Maximum dissipation Ptot [W]: 1.13W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 5.2A/-3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 5.2A/-3.4A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4532CDY-T1-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms/0.14 Ohms @ 5.2/-3.4A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Switch-on time ton [nsec.]: 11 ns/10 ns. Switch-off delay tf[nsec.]: 25/30 ns. Ciss Gate Capacitance [pF]: 305/340pF. Maximum dissipation Ptot [W]: 1.14W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, MS-012, 60V/-60V, 4.5A/-3.1A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 60V/-60V. Drain Current Id [A] @ 25°C: 4.5A/-3.1A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4559EY. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms/0.075 Ohms @ 4.5/-3.9A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Switch-on time ton [nsec.]: 13 ns/8 ns. Switch-off delay tf[nsec.]: 36/12ns. Ciss Gate Capacitance [pF]: 1000pF. Maximum dissipation Ptot [W]: 2.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 5A, 6.5A, 5uA, 0.0155 Ohms, SO, SO-8, 30 v. ID (T=100°C): 5A. ID (T=25°C): 6.5A. Idss (max): 5uA. On-resistance Rds On: 0.0155 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Id(imp): 40Ap. IDss (min): 1uA. Marking on the case: 4800B. Number of terminals: 8. Pd (Power Dissipation, Max): 1.3W. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 7 ns. Technology: TrenchFET ® Power MOSFET Reduced Qg. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.8V. Quantity per case: 1. Function: Fast Switching, Power MOSFET. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 9.9A, 12.4A, 5uA, 0.0074 Ohms, SO, SO-8, 40V. ID (T=100°C): 9.9A. ID (T=25°C): 12.4A. Idss (max): 5uA. On-resistance Rds On: 0.0074 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. C(in): 2000pF. Cost): 260pF. Channel type: N. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 25 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : no. G-S Protection: yes

N-channel transistor, PCB soldering (SMD), SO8, MS-012, 60V, 5.5A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 5.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 840pF. Maximum dissipation Ptot [W]: 2.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.052 Ohms @ 4.7A. Manufacturer's marking: SI4946BEY-T1-E3

N-channel transistor, PCB soldering (SMD), SO8, MS-012, 60V, 4.5A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 4.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4946EY-T1-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 60 ns. Ciss Gate Capacitance [pF]: 1000pF. Maximum dissipation Ptot [W]: 2.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), SO8, TO-263AB, 30 v, 6.2A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): TO-263AB. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI9410BDY-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.024 Ohms @ 8.1A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1000pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 4.5A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 4.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI9936BDY. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 550pF. Maximum dissipation Ptot [W]: 1.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 12A, 15A, 10uA, 0.0075 Ohms, PowerPAK SO-8, PowerPAK SO8 ( 6.15x5.15x1.07mm ), 30 v. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.0075 Ohms. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerPAK SO8 ( 6.15x5.15x1.07mm ). Voltage Vds(max): 30 v. C(in): 985pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 14 ns. Type of transistor: MOSFET. Function: 'High-Side Switch'. Id(imp): 50A. IDss (min): 1uA. Marking on the case: 196k Ohms. Number of terminals: 8. Pd (Power Dissipation, Max): 29.8W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 14 ns. Technology: TrenchFET ® Power MOSFET, (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

N-channel transistor, 90A, Other, Other, 600V. Ic(T=100°C): 90A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. C(in): 5000pF. Cost): 720pF. Channel type: N. Function: High Power IGBT. Collector current: 100A. Ic(pulse): 150A. Number of terminals: 7. RoHS: yes. Td(off): 450 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Note: Half Bridge IGBT MTP (Warp Speed 60-100KHz). Spec info: Ic 114A @ 25°C, 50A @ 109°C, Icm 360A (pulsed). CE diode: yes. Germanium diode: no

N-channel transistor, 330A, Other, Other, 1200V. Ic(T=100°C): 330A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 23.1pF. Cost): 1.9pF. Channel type: N. Function: High Power IGBT. Collector current: 470A. Ic(pulse): 600A. Dimensions: 106.4x61.4x30.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 650 ns. Td(on): 330 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 7. Spec info: IFSM--2200Ap (t=10ms). CE diode: yes. Germanium diode: no

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 107pF. Channel type: N. Trr Diode (Min.): 300 ns. Function: Fast S-IGBT in NPT technology. Collector current: 40A. Ic(pulse): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 179W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 445 ns. Td(on): 36ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: K20N60. CE diode: yes