Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.96£ | 1.15£ |
5 - 9 | 0.92£ | 1.10£ |
10 - 24 | 0.87£ | 1.04£ |
25 - 49 | 0.82£ | 0.98£ |
50 - 99 | 0.80£ | 0.96£ |
100 - 249 | 0.78£ | 0.94£ |
250 - 455 | 0.74£ | 0.89£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.96£ | 1.15£ |
5 - 9 | 0.92£ | 1.10£ |
10 - 24 | 0.87£ | 1.04£ |
25 - 49 | 0.82£ | 0.98£ |
50 - 99 | 0.80£ | 0.96£ |
100 - 249 | 0.78£ | 0.94£ |
250 - 455 | 0.74£ | 0.89£ |
N-channel transistor, 6.5A, 9.2A, 100uA, 0.093 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 55V - SPD09N05. N-channel transistor, 6.5A, 9.2A, 100uA, 0.093 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 55V. ID (T=100°C): 6.5A. ID (T=25°C): 9.2A. Idss (max): 100uA. On-resistance Rds On: 0.093 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 55V. C(in): 215pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: dv/dt rated Enhancement mode. Id(imp): 37A. IDss (min): 0.1uA. Marking on the case: SPD09N05. Pd (Power Dissipation, Max): 24W. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Quantity in stock updated on 21/04/2025, 06:25.
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