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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V - SPP08N80C3

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V - SPP08N80C3
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Quantity excl. VAT VAT incl.
1 - 4 2.53£ 3.04£
5 - 9 2.40£ 2.88£
10 - 24 2.33£ 2.80£
25 - 49 2.28£ 2.74£
50 - 53 2.23£ 2.68£
Quantity U.P
1 - 4 2.53£ 3.04£
5 - 9 2.40£ 2.88£
10 - 24 2.33£ 2.80£
25 - 49 2.28£ 2.74£
50 - 53 2.23£ 2.68£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 53
Set of 1

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V - SPP08N80C3. N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 0.56 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1100pF. Cost): 46pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 24A. IDss (min): 20uA. Marking on the case: 08N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 104W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 07/06/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 32
SPP11N80C3

SPP11N80C3

N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25...
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos
Set of 1
5.18£ VAT incl.
(4.32£ excl. VAT)
5.18£
Quantity in stock : 76
FQP9N90C

FQP9N90C

N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°...
FQP9N90C
N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET
FQP9N90C
N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET
Set of 1
5.64£ VAT incl.
(4.70£ excl. VAT)
5.64£

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