N-channel transistor, 90A, Other, Other, 600V - SKM100GAR123D

N-channel transistor, 90A, Other, Other, 600V - SKM100GAR123D. N-channel transistor, 90A, Other, Other, 600V. Ic(T=100°C): 90A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. C(in): 5000pF. Cost): 720pF. Channel type: N. Function: High Power IGBT. Collector current: 100A. Ic(pulse): 150A. Number of terminals: 7. RoHS: yes. Td(off): 450 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Note: Half Bridge IGBT MTP (Warp Speed 60-100KHz). Spec info: Ic 114A @ 25°C, 50A @ 109°C, Icm 360A (pulsed). CE diode: yes. Germanium diode: no. Quantity in stock updated on 21/04/2025, 08:25.