N-channel FETs and MOSFETs

N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. On-resistance Rds On: 0.13 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 70V. C(in): 298pF. Cost): 35pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 0uA. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V