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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 4.6A, 7.6A, 100uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 560V - SPD08N50C3

N-channel transistor, 4.6A, 7.6A, 100uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 560V - SPD08N50C3
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Quantity excl. VAT VAT incl.
1 - 4 2.38£ 2.86£
5 - 9 2.26£ 2.71£
10 - 24 2.14£ 2.57£
25 - 49 2.02£ 2.42£
50 - 95 1.98£ 2.38£
Quantity U.P
1 - 4 2.38£ 2.86£
5 - 9 2.26£ 2.71£
10 - 24 2.14£ 2.57£
25 - 49 2.02£ 2.42£
50 - 95 1.98£ 2.38£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 95
Set of 1

N-channel transistor, 4.6A, 7.6A, 100uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 560V - SPD08N50C3. N-channel transistor, 4.6A, 7.6A, 100uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 560V. ID (T=100°C): 4.6A. ID (T=25°C): 7.6A. Idss (max): 100uA. On-resistance Rds On: 0.50 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 560V. C(in): 750pF. Cost): 350pF. Channel type: N. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 22.8A. IDss (min): 0.5uA. Marking on the case: 08N50C3. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 6 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 50
STD10NM60N

STD10NM60N

N-channel transistor, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK...
STD10NM60N
N-channel transistor, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 650V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.53 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 650V. C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STD10NM60N
N-channel transistor, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 650V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.53 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 650V. C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.14£ VAT incl.
(1.78£ excl. VAT)
2.14£

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