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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 28A, 32A, 32A, 0.028 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - SPB32N03L

N-channel transistor, 28A, 32A, 32A, 0.028 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - SPB32N03L
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.84£ 1.01£
5 - 9 0.80£ 0.96£
10 - 24 0.78£ 0.94£
25 - 49 0.76£ 0.91£
50 - 99 0.74£ 0.89£
100 - 221 0.72£ 0.86£
Quantity U.P
1 - 4 0.84£ 1.01£
5 - 9 0.80£ 0.96£
10 - 24 0.78£ 0.94£
25 - 49 0.76£ 0.91£
50 - 99 0.74£ 0.89£
100 - 221 0.72£ 0.86£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 221
Set of 1

N-channel transistor, 28A, 32A, 32A, 0.028 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - SPB32N03L. N-channel transistor, 28A, 32A, 32A, 0.028 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 28A. ID (T=25°C): 32A. Idss (max): 32A. On-resistance Rds On: 0.028 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Pd (Power Dissipation, Max): 100W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Original product from manufacturer Siemens. Quantity in stock updated on 08/06/2025, 00:25.

Equivalent products :

Quantity in stock : 65
NDB6030L

NDB6030L

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): ...
NDB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
NDB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
Set of 1
1.57£ VAT incl.
(1.31£ excl. VAT)
1.57£
Quantity in stock : 718
CEB6030L

CEB6030L

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): ...
CEB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
CEB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
Set of 1
0.97£ VAT incl.
(0.81£ excl. VAT)
0.97£

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