N-channel FETs and MOSFETs

N-channel transistor, 47A, 68A, 100uA, 13.9m Ohms, D2PAK ( TO-263 ), D2PAK (SOT404), 100V. ID (T=100°C): 47A. ID (T=25°C): 68A. Idss (max): 100uA. On-resistance Rds On: 13.9m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK (SOT404). Voltage Vds(max): 100V. C(in): 3195pF. Cost): 221pF. Channel type: N. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: standard switching. Id(imp): 272A. IDss (min): 0.06uA. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52.5 ns. Td(on): 20.7 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 60.8A, 75A, 500uA, 12m Ohms, TO-220, TO-220AB ( SOT78 ), 100V. ID (T=100°C): 60.8A. ID (T=25°C): 75A. Idss (max): 500uA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 100V. C(in): 4900pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 240A. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: IDM--240A (Tmb 25°C; pulsed). G-S Protection: no

N-channel transistor, 36A, 50A, 500uA, TO-220, TO-220AB ( SOT78 ), 150V, 30 milliOhms. ID (T=100°C): 36A. ID (T=25°C): 50A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 150V. On-resistance Rds On: 30 milliOhms. C(in): 4720pF. Cost): 456pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 118 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 200A. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: IDM--200A (Tmb 25°C; pulsed). G-S Protection: no

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. C(in): 30pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 21.9A. IDss (min): 0.5uA. Marking on the case: 07N65C3. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 80A, 100uA, 5M Ohms, TO-220, TO-220, 30 v. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 30 v. C(in): 2930pF. Cost): 1150pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 380A. IDss (min): 0.1uA. Marking on the case: 2N03L04. Pd (Power Dissipation, Max): 188W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 13 ns. Technology: Cool Mos. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Number of terminals: 3. Quantity per case: 1. Spec info: Enhancement mode, Logic Level. G-S Protection: no

N-channel transistor, PCB soldering, TO-251AA, 50V, 14A. Housing: PCB soldering. Housing: TO-251AA. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFD14N05L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D-PAK, 50V, 14A. Housing: PCB soldering (SMD). Housing: D-PAK. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F14N05. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 12A, 1uA, 12A, 0.15 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 60V. ID (T=25°C): 12A. Idss: 1uA. Idss (max): 12A. On-resistance Rds On: 0.15 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 60V. C(in): 850pF. Cost): 170pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: diode. Marking on the case: F3055L. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 10 ns. Technology: 'Enhancement-Mode Power MOSFET'. Quantity per case: 1. Function: logic level control, ESD protection

N-channel transistor, 10A, 12A, 50uA, 0.20 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=25°C): 12A. Idss (max): 50uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 900pF. Cost): 325pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 30A. IDss (min): 1uA. Marking on the case: F12N10L. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 15 ns. Operating temperature: -55...+155°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Technology: MegaFET process, Power MOSFET. Spec info: N-Channel Logic Level Power MOSFET. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 12A, 12A, 0.15 Ohms, TO-220, TO-220AB, 60V. ID (T=25°C): 12A. Idss (max): 12A. On-resistance Rds On: 0.15 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. Channel type: N. Type of transistor: MOSFET. Function: MegaFET. Pd (Power Dissipation, Max): 53W. Assembly/installation: PCB through-hole mounting. Technology: 'Enhancement-Mode Power MOSFET'. Quantity per case: 1

N-channel transistor, PCB soldering, TO-220AB, 60V, 11A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP3055LE. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.107 Ohms @ 8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 38W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-220AB, 60V, 50A, 0.022 Ohms, TO-220, TO-220AB, 60V, 50. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. On-resistance Rds On: 0.022 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. Housing (JEDEC standard): 50. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP50N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.022 Ohms @ 50A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 37 ns. Ciss Gate Capacitance [pF]: 2020pF. Maximum dissipation Ptot [W]: 131W. Assembly/installation: PCB through-hole mounting. Td(off): 37 ns. Td(on): 12 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-220AB, 60V, 70A, TO-220, TO-220, 60V, 50. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 70A. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Housing (JEDEC standard): 50. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP70N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 70A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 2250pF. Maximum dissipation Ptot [W]: 150W. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 10 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Technology: MegaFET process, Power MOSFET. Spec info: Temperature Compensated PSPICE® Model

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 330V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 330V. Channel type: N. Trr Diode (Min.): 23 ns. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.6V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: trr 0.1us. CE diode: yes. Germanium diode: no

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 330V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 330V. Channel type: N. Trr Diode (Min.): 23 ns. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: trr 0.06us. CE diode: yes

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 300V. C(in): 1200pF. Cost): 80pF. Channel type: N. Trr Diode (Min.): 23 ns. Compatibility: Samsung PS42C450B1WXXU. Function: High Speed ​​Power Switching. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.06 ns. Td(on): 0.02 ns. Technology: Trench gate and thin wafer technology G6H-II ser. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Spec info: trr 0.06us. CE diode: yes. Germanium diode: no

N-channel transistor, 20A, 20A, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 20A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Channel type: N. Conditioning: plastic tube. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 178W. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Power MOSFET. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30

N-channel transistor, 40A, 40A, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 40A. Idss (max): 40A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Channel type: N. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Technology: N-channel MOSFET transistor. Quantity per case: 1. Function: Trr 450ns, td(on) 52ns, td(off) 180ns

N-channel transistor, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 360V. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Collector/emitter voltage Vceo: 360V. C(in): 85pF. Cost): 40pF. Channel type: N. Function: IGBT. Collector current: 30A. Ic(pulse): 250A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.6V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. Spec info: 150ns, 30W, 40A. CE diode: no. Germanium diode: no

N-channel transistor, 115mA, 115mA, 7.5 Ohms, SOT-23 ( TO-236 ), SOT-23, 60V. ID (T=25°C): 115mA. Idss (max): 115mA. On-resistance Rds On: 7.5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 60V. C(in): 25pF. Cost): 10pF. Channel type: N. Type of transistor: MOSFET. Function: Interface and switching. Id(imp): 0.8A. Marking on the case: RKM. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 12 ns. Technology: Silicon N-channel MOSFET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 2.5A, 2.5A, 0.074 Ohms, TSMT3, 30 v. ID (T=25°C): 2.5A. Idss (max): 2.5A. On-resistance Rds On: 0.074 Ohms. Housing (according to data sheet): TSMT3. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Id(imp): 10A. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: N-Ch MOS FET. Quantity per case: 1. Note: screen printing/SMD code QY. Function: power switching, DC/DC converters

N-channel transistor, 9.5A, 1uA, 0.011 Ohms, SO, SO-8, 45V. ID (T=25°C): 9.5A. Idss (max): 1uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 45V. C(in): 1830pF. Cost): 410pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 35A. Marking on the case: TB. Number of terminals: 8. Temperature: +150°C. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 78 ns. Td(on): 20 ns. Technology: 4V Drive N-ch MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. Function: power switching, DC/DC converters, inverters. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 10A, 10A, 0.0125 Ohms, SO, SO-8, 30 v. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.0125 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Assembly/installation: surface-mounted component (SMD). Technology: 4V Drive N-ch MOSFET. Quantity per case: 1

N-channel transistor, 20A, 20A, TO-247, TO-247. ID (T=25°C): 20A. Idss (max): 20A. Housing: TO-247. Housing (according to data sheet): TO-247. Function: N MOSFET transistor. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Quantity per case: 1

N-channel transistor, 30A, TO-3PN ( 2-16C1B ), TO-3PN, 600V. Ic(T=100°C): 30A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 600V. C(in): 1970pF. Cost): 310pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 50 ns. Function: High Speed ​​IGBT. Collector current: 48A. Ic(pulse): 90A. Marking on the case: G30N60RUFD. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Spec info: Ic 48A @ 25°C, 30A @ 110°C, Icm 90A (pulsed). CE diode: yes. Germanium diode: no