N-channel FETs and MOSFETs

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: SPP17N80C2. Pd (Power Dissipation, Max): 208W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Number of terminals: 3. Quantity per case: 1

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. C(in): 3000pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 40A. IDss (min): 0.5uA. Marking on the case: 20N60S5. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 120ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 4.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 55V, 80A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 80A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N06L11. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.015 Ohms @ 40A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 68 ns. Ciss Gate Capacitance [pF]: 2650pF. Maximum dissipation Ptot [W]: 158W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 156W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.29 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, PCB soldering, TO-247, 650V, 20.7A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 20.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60C3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.19 Ohms @ 13.1A. Gate breakdown voltage Ugs [V]: 3.9V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 2400pF. Maximum dissipation Ptot [W]: 208W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.19 Ohms, PG-TO247 HV, 600V. On-resistance Rds On: 0.19 Ohms. Housing: PG-TO247 HV. Drain-source voltage (Vds): 600V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 20A. Power: 208W

N-channel transistor, PCB soldering (SMD), SOT-23, MS-012, 30 v, 8A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ 8A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 2.5A, 4A, 250uA, 1.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 250uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1150pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 415 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 28A. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 18 ns. Technology: Power-MOSFET (F). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SOT-23, 40V, 1mA. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 40V. Drain current Idss [A] @ Ug=0V: 1mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P1. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -1.5V @ +15V. Maximum dissipation Ptot [W]: 0.35W. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 80A, 80A, 10uA, 3.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 3.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 320A. IDss (min): 1uA. Marking on the case: 120N4F6. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: Switching applications, Automotive. G-S Protection: no

N-channel transistor, 6.8A, 11A, 100uA, 0.29 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 550V. ID (T=100°C): 6.8A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.29 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. C(in): 940pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Id(imp): 44A. IDss (min): 1uA. Marking on the case: B12NM50N. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 15 ns. Technology: MDmesh Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 6.9A, 11A, 100uA, 0.29 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 550V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.29 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. C(in): 850pF. Cost): 48pF. Channel type: N. Trr Diode (Min.): 122 ns. Type of transistor: MOSFET. Id(imp): 44A. IDss (min): 1uA. Marking on the case: B12NM50ND. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 12 ns. Technology: FDmesh™ II Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Spec info: FDmesh™ II Power MOSFET (with fast diode). Drain-source protection : yes. G-S Protection: no

N-channel transistor, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.115 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 100V. C(in): 470pF. Cost): 70pF. Channel type: N. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 52A. IDss (min): 1uA. Marking on the case: D10NF10. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 16 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 650V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.53 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 650V. C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 6.93A, 11A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ), 650V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ). Voltage Vds(max): 650V. C(in): 790pF. Cost): 70pF. Channel type: N. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Id(imp): 44A. IDss (min): 1uA. Marking on the case: 13NM60N. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. On-resistance Rds On: 3.8 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 10A. IDss (min): 1uA. Marking on the case: D3NK80Z. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 75. G-S Protection: yes

N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. On-resistance Rds On: 3.8 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: roll. Drain-source protection : Zener diode. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 10A. IDss (min): 1uA. Marking on the case: D3NK80Z. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2000. G-S Protection: yes

N-channel transistor, 1.9A, 3A, 1uA, 3A, 2.3 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 500V. ID (T=100°C): 1.9A. ID (T=25°C): 3A. Idss: 1uA. Idss (max): 3A. On-resistance Rds On: 2.3 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 500V. C(in): 310pF. Cost): 49pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 12A. Marking on the case: D4NK50Z. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 10 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 2.5A, 4A, 1uA, 4A, 1.76 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss: 1uA. Idss (max): 4A. On-resistance Rds On: 1.76 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 510pF. Cost): 47pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 16A. Marking on the case: D4NK60Z. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 12 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 2.77A, 4.4A, 50uA, 1.2 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.77A. ID (T=25°C): 4.4A. Idss (max): 50uA. On-resistance Rds On: 1.2 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. C(in): 545pF. Cost): 45pF. Channel type: N. Number of channels: 1. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Id(imp): 17.6A. IDss (min): 5uA. Marking on the case: 5N52K3. Pd (Power Dissipation, Max): 70W. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 9 ns. Technology: SuperMESH3™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Function: Switching applications, Gate charge minimized, Low IDSS. Spec info: Enhancement type. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 2.8A, 4.4A, 500uA, 1.25 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.8A. ID (T=25°C): 4.4A. Idss (max): 500uA. On-resistance Rds On: 1.25 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. C(in): 529pF. Cost): 71pF. Channel type: N. Number of channels: 1. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 17.6A. IDss (min): 10uA. Marking on the case: 5N52U. Pd (Power Dissipation, Max): 70W. Assembly/installation: surface-mounted component (SMD). Td(off): 23.1 ns. Td(on): 11.4 ns. Technology: UltraFASTmesh™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Function: Switching applications, Gate charge minimized. Spec info: Enhancement type. Drain-source protection : yes. G-S Protection: yes