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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 80A, 1uA, 3.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V - SPB80N04S2-H4

N-channel transistor, 80A, 1uA, 3.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V - SPB80N04S2-H4
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Quantity excl. VAT VAT incl.
1 - 4 1.41£ 1.69£
5 - 9 1.34£ 1.61£
10 - 24 1.27£ 1.52£
25 - 49 1.20£ 1.44£
50 - 58 1.17£ 1.40£
Quantity U.P
1 - 4 1.41£ 1.69£
5 - 9 1.34£ 1.61£
10 - 24 1.27£ 1.52£
25 - 49 1.20£ 1.44£
50 - 58 1.17£ 1.40£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 58
Set of 1

N-channel transistor, 80A, 1uA, 3.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V - SPB80N04S2-H4. N-channel transistor, 80A, 1uA, 3.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=25°C): 80A. Idss (max): 1uA. On-resistance Rds On: 3.4M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. C(in): 4480pF. Cost): 1580pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 195 ns. Type of transistor: MOSFET. Function: 'Enhancement mode'. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N04H4. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 46 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 293
STB120N4F6

STB120N4F6

N-channel transistor, 80A, 80A, 10uA, 3.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100Â...
STB120N4F6
N-channel transistor, 80A, 80A, 10uA, 3.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 3.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 320A. IDss (min): 1uA. Marking on the case: 120N4F6. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: Switching applications, Automotive. G-S Protection: no
STB120N4F6
N-channel transistor, 80A, 80A, 10uA, 3.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 3.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 320A. IDss (min): 1uA. Marking on the case: 120N4F6. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: Switching applications, Automotive. G-S Protection: no
Set of 1
2.70£ VAT incl.
(2.25£ excl. VAT)
2.70£

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