N-channel FETs and MOSFETs

N-channel transistor, 0.0026 Ohms, TO-220AB, 40V. On-resistance Rds On: 0.0026 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 40V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 123A/120A. Power: 99W

N-channel transistor, 5.8A, 9.2A, 250uA, 0.75 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 180pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 37A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: High-speed switching. G-S Protection: no

N-channel transistor, 5.4A, 8.5A, 8.5A, 0.93 Ohms, TO-220, TO-220AB, 650V. ID (T=100°C): 5.4A. ID (T=25°C): 8.5A. Idss (max): 8.5A. On-resistance Rds On: 0.93 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 650V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Pd (Power Dissipation, Max): 167W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 4.4 Ohms, TO-220, 600V. On-resistance Rds On: 4.4 Ohms. Housing: TO-220. Drain-source voltage (Vds): 600V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 2.2A. Power: 50W

N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 2.3A, 3.6A, 250uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 250uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 510pF. Cost): 70pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 9.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 600V, 6.2A, 1.2 Ohms, TO-220, 600V. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 6.2A. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Drain-source voltage (Vds): 600V. Manufacturer's marking: IRFBC40PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 3.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 55 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 6.2A. Power: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.6A, 4.1A, 500uA, 3 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 2.6A. ID (T=25°C): 4.1A. Idss (max): 500uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. C(in): 1300pF. Cost): 310pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 16A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 82 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 800V, 4.1A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 4.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFBE30PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 82 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.1A, 1.7A, 500uA, 8 Ohms, TO-262 ( I2-PAK ), TO-262, 900V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 8 Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 900V. C(in): 490pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 6.8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 54W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 56 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 900V, 3.6A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 3.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFBF30PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 2.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2A, 3.1A, 500uA, 5 Ohms, TO-220, TO-220AB, 1000V. ID (T=100°C): 2A. ID (T=25°C): 3.1A. Idss (max): 500uA. On-resistance Rds On: 5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 1000V. C(in): 980pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 12A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 89 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 1 kV, 3.1A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 3.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFBG30PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 1.9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 89 ns. Ciss Gate Capacitance [pF]: 980pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.2A, 1.7A, 0.025mA, 250uA, 0.20 Ohms, DIP, DH-1 house, DIP-4, 60V. ID (T=100°C): 1.2A. ID (T=25°C): 1.7A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 310pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: FET. Function: td(on) 10ns, td(off) 13ns. Id(imp): 14A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.2, DIP-4, 60V. On-resistance Rds On: 0.2. Housing: DIP-4. Drain-source voltage (Vds): 60V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 1.7A

N-channel transistor, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, DH-1 house, DIP-4, 60V. ID (T=100°C): 1.8A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 640pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 88 ns. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 60V, 2.5A, 60V, DIP4. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.5A. Vdss (Drain to Source Voltage): 60V. Housing: DIP4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 2.5A. Gate/source voltage Vgs: 100m Ohms / 1.5A / 10V. Gate/source voltage Vgs max: -20V. Max: 1.3W. Mounting Type: THT

N-channel transistor, 0.71A, 1A, 250uA, 0.54 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.71A. ID (T=25°C): 1A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 180pF. Cost): 81pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 8A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, DIP4, 100V, 1A, DIP-4. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1A. Housing (JEDEC standard): DIP-4. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD110PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 0.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering, DIP4, 100V, 1.3A. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD120PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 0.78A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8 ns. Switch-off delay tf[nsec.]: 18 ns. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Ciss Gate Capacitance [pF]: 360pF

N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 0.38A, 0.6A, 250uA, 1.5 Ohms, DIP, DH-1 house, DIP-4, 200V. ID (T=100°C): 0.38A. ID (T=25°C): 0.6A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 4.8A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 0.38A, 0.8A, 250uA, 0.8 Ohms, DIP, DH-1 house, DIP-4, 200V. ID (T=100°C): 0.38A. ID (T=25°C): 0.8A. Idss (max): 250uA. On-resistance Rds On: 0.8 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. RoHS: yes. C(in): 22pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 6.4A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 7.2 ns. Technology: third-generation power MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no