N-channel FETs and MOSFETs

N-channel transistor, 150A, 210A, 250uA, 0.0028 Ohm, TO-220, TO-220AB, 75V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 0.0028 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 9400pF. Cost): 820pF. Channel type: N. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 850A. IDss (min): 20uA. Pd (Power Dissipation, Max): 370W. Assembly/installation: PCB through-hole mounting. Td(off): 69 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 150A, 210A, 250uA, 2.4M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 2.4M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 6540pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 840A. IDss (min): 20uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 60.4k Ohms, 170A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 670A. IDss (min): 20uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 60.4k Ohms, 170A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 670A. IDss (min): 20uA. Marking on the case: FB3207. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 110A, 160A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 4520pF. Cost): 500pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 31 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 620A. IDss (min): 20uA. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 90A, 128A, 250uA, 0.0046 Ohm, TO-220, TO-220AB, 75V. ID (T=100°C): 90A. ID (T=25°C): 128A. Idss (max): 250uA. On-resistance Rds On: 0.0046 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 4750pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 512A. IDss (min): 20uA. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 56A, 80A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 56A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. Cost): 280pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 310A. IDss (min): 20uA. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. C(in): 3070pF. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 12A, 17A, 250uA, 80m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 80m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 800pF. Cost): 74pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. Id(imp): 51A. IDss (min): 20uA. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 7 ns. Technology: Digital Audio MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.9V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

N-channel transistor, 13A, 18A, 250uA, 80m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 80m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1200pF. Cost): 91pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. Id(imp): 52A. IDss (min): 20uA. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7.8 ns. Technology: Digital Audio MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4.9V. Vgs(th) min.: 3V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 130A, 60.4k Ohms, 250uA, 3.7m Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 130A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. On-resistance Rds On: 3.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 9620pF. Cost): 670pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 670A. IDss (min): 20uA. Pd (Power Dissipation, Max): 370W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 78 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Weight: 1.99g. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 74A, 104A, 250uA, TO-220, TO-220AB, 150V, 0.0093 Ohms. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. On-resistance Rds On: 0.0093 Ohms. Cost): 490pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 86 ns. Type of transistor: MOSFET. IDss (min): 20uA. Pd (Power Dissipation, Max): 380W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 41 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 3V. Number of terminals: 3. Weight: 1.99g. C(in): 5270pF. Id(imp): 420A. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 19.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 260A. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 1mA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 4530pF. Cost): 550pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 330A. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 24 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 33A, 46A, 1mA, 38m Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 33A. ID (T=25°C): 46A. Idss (max): 1mA. On-resistance Rds On: 38m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 4560pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Class-D Audio Amplifier 300W-500W (Half-bridge). Id(imp): 180A. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 31A, 44A, 250uA, 0.055 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.055 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 3430pF. Cost): 530pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 180A. IDss (min): 25uA. Marking on the case: FB42N20D. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: SMPS, High frequency DC-DC converters. G-S Protection: no

N-channel transistor, 69A, 97A, 250uA, 0.072 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 69A. ID (T=25°C): 97A. Idss (max): 250uA. On-resistance Rds On: 0.072 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 4820pF. Cost): 340pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. Id(imp): 390A. IDss (min): 20uA. Marking on the case: IRFB4410ZPBF. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 92A, 130A, 250uA, 5.6M Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss (max): 250uA. On-resistance Rds On: 5.6M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 7670pF. Cost): 540pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 550A. IDss (min): 20uA. Marking on the case: IRFB4310. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 53A, 75A, 250uA, 0.011 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 53A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 6160pF. Cost): 440pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 300A. IDss (min): 1uA. Marking on the case: FB4710. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 100V, 75A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 75A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFB4710PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 45A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 35 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 6160pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 36A, 51A, 250uA, 0.032 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 36A. ID (T=25°C): 51A. Idss (max): 250uA. On-resistance Rds On: 0.032 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 2770pF. Cost): 590pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Id(imp): 230A. IDss (min): 25uA. Marking on the case: FB52N15D. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: High frequency DC-DC converters, Plasma Display. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 25A, 35A, 250uA, 0.032 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 25A. ID (T=25°C): 35A. Idss (max): 250uA. On-resistance Rds On: 0.032 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 1750pF. Cost): 155pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: for class-D audio amplifier applications. Id(imp): 140A. IDss (min): 20uA. Marking on the case: IRFB5615PbF. Number of terminals: 3. Pd (Power Dissipation, Max): 144W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 17.2ns. Td(on): 8.9 ns. Technology: Digital Audio MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. G-S Protection: no

N-channel transistor, 180A, 250A, 150uA, 1.5M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 180A. ID (T=25°C): 250A. Idss (max): 150uA. On-resistance Rds On: 1.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Channel type: N. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 1000A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 78 ns. Td(on): 19 ns. Technology: StrongIRFET, HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.2V. C(in): 7330pF. Cost): 1095pF. Function: BLDC Motor drive applications, Battery powered circuits, DC/DC and AC/DC converters. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.0015 Ohms, TO-220AB, 40V. On-resistance Rds On: 0.0015 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 40V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 250A/195A. Power: 230W

N-channel transistor, 0.002 Ohms, TO-220AB, 40V. On-resistance Rds On: 0.002 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 40V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 172A/120A. Power: 143W

N-channel transistor, 60.4k Ohms, 172A, 150uA, 2M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 172A. Idss (max): 150uA. On-resistance Rds On: 2M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 4730pF. Cost): 680pF. Channel type: N. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Id(imp): 770A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 143W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 24 ns. Technology: StrongIRFET, HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.2V. Function: BLDC Motor drive applications, Battery powered circuits, DC/DC and AC/DC converters. Drain-source protection : yes. G-S Protection: no