N-channel transistor, 60V, DIP4, 60V, 2.5A - IRFD024PBF

N-channel transistor, 60V, DIP4, 60V, 2.5A - IRFD024PBF. N-channel transistor, 60V, DIP4, 60V, 2.5A. Vdss (Drain to Source Voltage): 60V. Housing: DIP4. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.5A. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 2.5A. Gate/source voltage Vgs: 100m Ohms / 1.5A / 10V. Gate/source voltage Vgs max: -20V. Max: 1.3W. Mounting Type: THT. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Original product from manufacturer Vishay (ir). Quantity in stock updated on 09/06/2025, 02:25.