N-channel transistor, 60V, 2.5A, 60V, DIP4 - IRFD024PBF

Quantity	excl. VAT	VAT incl.
1 - 4	1.06£	1.27£
5 - 9	1.00£	1.20£
10 - 24	0.93£	1.12£
25 - 49	0.85£	1.02£
50 - 99	0.83£	1.00£
100 - 249	1.14£	1.37£
250 - 521	1.36£	1.63£

Quantity	U.P
1 - 4	1.06£	1.27£
5 - 9	1.00£	1.20£
10 - 24	0.93£	1.12£
25 - 49	0.85£	1.02£
50 - 99	0.83£	1.00£
100 - 249	1.14£	1.37£
250 - 521	1.36£	1.63£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 521

Set of 1

N-channel transistor, 60V, 2.5A, 60V, DIP4 - IRFD024PBF. N-channel transistor, 60V, 2.5A, 60V, DIP4. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.5A. Vdss (Drain to Source Voltage): 60V. Housing: DIP4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 2.5A. Gate/source voltage Vgs: 100m Ohms / 1.5A / 10V. Gate/source voltage Vgs max: -20V. Max: 1.3W. Mounting Type: THT. Quantity in stock updated on 22/04/2025, 01:25.

Technical documentation