N-channel transistor, 0.71A, 1A, 250uA, 0.54 Ohms, DIP, DH-1 house, DIP-4, 100V - IRFD110

N-channel transistor, 0.71A, 1A, 250uA, 0.54 Ohms, DIP, DH-1 house, DIP-4, 100V - IRFD110. N-channel transistor, 0.71A, 1A, 250uA, 0.54 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.71A. ID (T=25°C): 1A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 180pF. Cost): 81pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 8A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 22/04/2025, 00:25.