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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V - IRFD123

N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V - IRFD123
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.32£ 1.58£
5 - 9 1.25£ 1.50£
10 - 24 1.19£ 1.43£
25 - 49 1.12£ 1.34£
50 - 56 1.10£ 1.32£
Quantity U.P
1 - 4 1.32£ 1.58£
5 - 9 1.25£ 1.50£
10 - 24 1.19£ 1.43£
25 - 49 1.12£ 1.34£
50 - 56 1.10£ 1.32£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 56
Set of 1

N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V - IRFD123. N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 22/04/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 135
IRFD120

IRFD120

N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0....
IRFD120
N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFD120
N-channel transistor, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.02£ VAT incl.
(0.85£ excl. VAT)
1.02£

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