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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 4.1A, 6.5A, 250uA, 0.4 Ohms, TO-220FP, TO-220F, 200V - IRFI630G

N-channel transistor, 4.1A, 6.5A, 250uA, 0.4 Ohms, TO-220FP, TO-220F, 200V - IRFI630G
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Quantity excl. VAT VAT incl.
1 - 4 1.43£ 1.72£
5 - 9 1.36£ 1.63£
10 - 24 1.29£ 1.55£
25 - 43 1.21£ 1.45£
Quantity U.P
1 - 4 1.43£ 1.72£
5 - 9 1.36£ 1.63£
10 - 24 1.29£ 1.55£
25 - 43 1.21£ 1.45£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 43
Set of 1

N-channel transistor, 4.1A, 6.5A, 250uA, 0.4 Ohms, TO-220FP, TO-220F, 200V - IRFI630G. N-channel transistor, 4.1A, 6.5A, 250uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 250uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 800pF. Cost): 240pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Id(imp): 36A. IDss (min): 25uA. Marking on the case: IRFI630G. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 9.4 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 22/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 396
IRFS630A

IRFS630A

N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID ...
IRFS630A
N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFS630A
N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.15£ VAT incl.
(0.96£ excl. VAT)
1.15£

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