N-channel FETs and MOSFETs

N-channel transistor, 22A, 31A, 31A, 0.024 Ohms, TO-220FP, TO-220F, 55V. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 31A. On-resistance Rds On: 0.024 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 55V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 1.9A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 1.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL014N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 1.9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.6 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 60V, 2.7A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FA. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 13 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.3A, 2.8A, 250uA, 0.075 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V. ID (T=100°C): 2.3A. ID (T=25°C): 2.8A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 55V. C(in): 400pF. Cost): 145pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 11.2A. IDss (min): 25uA. Equivalents: IRFL024NPBF. Number of terminals: 3. Pd (Power Dissipation, Max): 2.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 22.2 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SOT-223, 55V, 2.8A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 2.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 400pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 100V, 1.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL110. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 0.6A. ID (T=25°C): 0.96A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 7.7A. IDss (min): 25uA. Note: screen printing/SMD code FC. Marking on the case: FC. Number of terminals: 4. Pd (Power Dissipation, Max): 3.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SOT-223, 200V, 0.96A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.96A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FC. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 0.58A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 14 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3A, 5.2A, 250uA, 0.045 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V. ID (T=100°C): 3A. ID (T=25°C): 5.2A. Idss (max): 250uA. On-resistance Rds On: 0.045 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 55V. RoHS: yes. C(in): 660pF. Cost): 230pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 30A. IDss (min): 25uA. IGF: 660pF. Number of terminals: 4. Pd (Power Dissipation, Max): 2.1W. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SOT-223, 100V, 1.6A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL4310. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.8 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247AC, 55V, 53A, 1, TO-247, TO-247AC, 55V. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 53A. Housing (JEDEC standard): 1. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP044N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ 29A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1500pF. Maximum dissipation Ptot [W]: 120W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 12 ns. Technology: HEXFET

N-channel transistor, 52A, 70A, 250uA, 0.018 Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 52A. ID (T=25°C): 70A. Idss (max): 250uA. On-resistance Rds On: 0.018 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 60V. C(in): 2400pF. Cost): 1300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: PowerMOSFET. G-S Protection: no. Id(imp): 290A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 45A, 64A, 250uA, 0.016 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 45A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.016 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 1900pF. Cost): 620pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 94 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 11 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 64A, 70A, 250uA, 0.014 Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 64A. ID (T=25°C): 70A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 60V. C(in): 4500pF. Cost): 2000pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 360A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 83 ns. Td(on): 20 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 57A, 81A, 250uA, 0.012 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 57A. ID (T=25°C): 81A. Idss (max): 250uA. On-resistance Rds On: 0.012 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 2900pF. Cost): 880pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 81 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 290A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 59A, 110A, 250uA, 0.008 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 59A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 4000pF. Cost): 1300pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 390A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: Ultra Low On-Resistance. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, -20V, 55V, 110A. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): -20V. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 110A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP064NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 4000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-247AC, 60V, 70A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 70A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP064PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.009 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 21 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 7400pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 22A, 31A, 250uA, 0.077 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.077 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 1700pF. Cost): 550pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 25uA. Note: complementary transistor (pair) IRFP9140. Pd (Power Dissipation, Max): 180W. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Power: 180W. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 110A, 160A, 250uA, 0.0042 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 0.0042 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 5600pF. Cost): 1310pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Advanced Process Technology, Ultra Low On-Resistance. G-S Protection: no. Id(imp): 640A. IDss (min): 25uA. Pd (Power Dissipation, Max): 310W. RoHS: yes. Td(off): 140 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Power: 310W. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 31A, 31A, 0.51 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 100V. ID (T=25°C): 31A. Idss (max): 31A. On-resistance Rds On: 0.51 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 100V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. Pd (Power Dissipation, Max): 131W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET

N-channel transistor, 16A, 33A, 250uA, 0.052 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 16A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.052 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. G-S Protection: no. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 29A, 41A, 250uA, 0.55 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 29A. ID (T=25°C): 41A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 160A. IDss (min): 25uA. Marking on the case: IRFP150. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 30A, 42A, 250uA, 0.36 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.36 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 1900pF. Cost): 450pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 140A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 100V, 42A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 42A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP150NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 23A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C