Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.73£ | 2.08£ |
5 - 9 | 1.64£ | 1.97£ |
10 - 24 | 1.56£ | 1.87£ |
25 - 49 | 1.47£ | 1.76£ |
50 - 63 | 1.46£ | 1.75£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.73£ | 2.08£ |
5 - 9 | 1.64£ | 1.97£ |
10 - 24 | 1.56£ | 1.87£ |
25 - 49 | 1.47£ | 1.76£ |
50 - 63 | 1.46£ | 1.75£ |
N-channel transistor, 0.85 Ohm 40W, TO-220-F, 2.9A, 4.6A, 250uA, 0.85 Ohms, TO-220FP, TO-220F, 500V, 500V - IRFI840G. N-channel transistor, 0.85 Ohm 40W, TO-220-F, 2.9A, 4.6A, 250uA, 0.85 Ohms, TO-220FP, TO-220F, 500V, 500V. On-resistance Rds On: 0.85 Ohm 40W. Housing: TO-220-F. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Drain-source voltage (Vds): 500V. Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. Type of transistor: MOSFET. G-S Protection: diode. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 22/04/2025, 01:25.
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