N-channel FETs and MOSFETs

N-channel transistor, PCB soldering, TO-247AC, 100V, 42A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 42A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP150PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 23A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 60 ns. Ciss Gate Capacitance [pF]: 2800pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 13A, 22A, 250uA, 0.23 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 22A. Idss (max): 250uA. On-resistance Rds On: 0.23 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 3450pF. Cost): 513pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: SMPS MOSFET. G-S Protection: no. Id(imp): 88A. IDss (min): 25uA. Pd (Power Dissipation, Max): 277W. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 12A, 20A, 250uA, 0.18 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 12A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 1300pF. Cost): 400pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) IRFP9240. Weight: 4.6g. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 200V, 20A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP240PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 200V, 30A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 30A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP250NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 2159pF. Maximum dissipation Ptot [W]: 214W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-247AC, 200V, 30A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 30A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP250PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.085 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 2800pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247AC, 250V, 23A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 23A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP254PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.14 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 74 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 35A, 50A, 250uA, 0.04 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 4057pF. Cost): 603pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 268 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. G-S Protection: no. Id(imp): 200A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Weight: 5.57g. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247, 200V, 50A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 50A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP260NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 55 ns. Ciss Gate Capacitance [pF]: 4057pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-247AC, 200V, 46A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 46A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP260PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 5200pF. Maximum dissipation Ptot [W]: 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 24A, 38A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 250V. ID (T=100°C): 24A. ID (T=25°C): 38A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 250V. C(in): 5400pF. Cost): 870pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: fast switching, dynamic dv/dt. G-S Protection: no. Id(imp): 150A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 22 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 18A, 27A, 250uA, 0.18 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 18A. ID (T=25°C): 27A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 4660pF. Cost): 460pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Function: SMPS MOSFET, Low Gate Charge. G-S Protection: no. Id(imp): 110A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 27 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 148A, 209A, 250uA, 3.6m Ohms, TO-247, TO-247AC, 75V. ID (T=100°C): 148A. ID (T=25°C): 209A. Idss (max): 250uA. On-resistance Rds On: 3.6m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 75V. C(in): 13000pF. Cost): 2100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Id(imp): 870A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 470W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 23 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 75V, 90A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 90A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP2907PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0045 Ohms @ 125A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 13000pF. Maximum dissipation Ptot [W]: 470W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-247AC, 75V, 90A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 90A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP2907ZPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0045 Ohms @ 90A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 97 ns. Ciss Gate Capacitance [pF]: 7500pF. Maximum dissipation Ptot [W]: 310W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 190A, 270A, 250uA, 2.1M Ohms, TO-247, TO-247AC. ID (T=100°C): 190A. ID (T=25°C): 270A. Idss (max): 250uA. On-resistance Rds On: 2.1M Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. C(in): 8970pF. Cost): 1020pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 1080A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. RoHS: yes. Weight: 4.58g. Assembly/installation: PCB through-hole mounting. Td(off): 118 ns. Td(on): 16 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 20A, 31A, 2mA, 0.15 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 20A. ID (T=25°C): 31A. Idss (max): 2mA. On-resistance Rds On: 0.15 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 5000pF. Cost): 553pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 124A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 460W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 28 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 140A, 200A, 250uA, 2.4M Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss (max): 250uA. On-resistance Rds On: 2.4M Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 60V. C(in): 6540pF. Cost): 720pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. G-S Protection: no. Id(imp): 840A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 150V, 43A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 150V. Drain Current Id [A] @ 25°C: 43A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP3415PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.042 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 72 ns. Ciss Gate Capacitance [pF]: 2400pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 9.6A, 16A, 250uA, 0.3 Ohms, TO-247, TO-247AC, 400V. ID (T=100°C): 9.6A. ID (T=25°C): 16A. Idss (max): 250uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 400V. C(in): 2600pF. Cost): 660pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. IDss (min): 25uA. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 87 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 400V, 19A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 19A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP350PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.3 Ohms @ 9.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 87 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 14A, 23A, 250uA, 0.20 Ohms, TO-247, TO-247AC, 400V. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 400V. C(in): 4500pF. Cost): 1100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 92A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 14A, 23A, 250uA, 0.20 Ohms, TO-247, TO-247AC, 400V. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 400V. C(in): 3400pF. Cost): 540pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 91A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247AC, 400V, 23A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 23A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP360PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 4500pF. Maximum dissipation Ptot [W]: 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C