N-channel transistor, 92A, 130A, 250uA, 5.6M Ohms, TO-220, TO-220AB, 100V - IRFB4310PBF

Quantity	excl. VAT	VAT incl.
1 - 4	3.98£	4.78£
5 - 9	3.78£	4.54£
10 - 24	3.58£	4.30£
25 - 49	3.38£	4.06£
50 - 99	3.30£	3.96£
100 - 157	2.92£	3.50£

Quantity	U.P
1 - 4	3.98£	4.78£
5 - 9	3.78£	4.54£
10 - 24	3.58£	4.30£
25 - 49	3.38£	4.06£
50 - 99	3.30£	3.96£
100 - 157	2.92£	3.50£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 157

Set of 1

N-channel transistor, 92A, 130A, 250uA, 5.6M Ohms, TO-220, TO-220AB, 100V - IRFB4310PBF. N-channel transistor, 92A, 130A, 250uA, 5.6M Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss (max): 250uA. On-resistance Rds On: 5.6M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 7670pF. Cost): 540pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 550A. IDss (min): 20uA. Marking on the case: IRFB4310. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.