Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.54£ | 1.85£ |
5 - 9 | 1.46£ | 1.75£ |
10 - 24 | 1.39£ | 1.67£ |
25 - 49 | 1.31£ | 1.57£ |
50 - 50 | 1.28£ | 1.54£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.54£ | 1.85£ |
5 - 9 | 1.46£ | 1.75£ |
10 - 24 | 1.39£ | 1.67£ |
25 - 49 | 1.31£ | 1.57£ |
50 - 50 | 1.28£ | 1.54£ |
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V - IRFBC40. N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 22/04/2025, 00:25.
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