N-channel transistor, 69A, 97A, 250uA, 0.072 Ohms, TO-220, TO-220AB, 100V - IRFB42N20DPBF

Quantity	excl. VAT	VAT incl.
1 - 4	2.98£	3.58£
5 - 9	2.83£	3.40£
10 - 24	2.68£	3.22£
25 - 49	2.53£	3.04£
50 - 79	2.48£	2.98£

Quantity	U.P
1 - 4	2.98£	3.58£
5 - 9	2.83£	3.40£
10 - 24	2.68£	3.22£
25 - 49	2.53£	3.04£
50 - 79	2.48£	2.98£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 79

Set of 1

N-channel transistor, 69A, 97A, 250uA, 0.072 Ohms, TO-220, TO-220AB, 100V - IRFB42N20DPBF. N-channel transistor, 69A, 97A, 250uA, 0.072 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 69A. ID (T=25°C): 97A. Idss (max): 250uA. On-resistance Rds On: 0.072 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 4820pF. Cost): 340pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Function: High Speed Power Switching. Id(imp): 390A. IDss (min): 20uA. Marking on the case: IRFB4410ZPBF. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.