N-channel transistor, 1.1A, 1.7A, 500uA, 8 Ohms, TO-262 ( I2-PAK ), TO-262, 900V - IRFBF20S

N-channel transistor, 1.1A, 1.7A, 500uA, 8 Ohms, TO-262 ( I2-PAK ), TO-262, 900V - IRFBF20S. N-channel transistor, 1.1A, 1.7A, 500uA, 8 Ohms, TO-262 ( I2-PAK ), TO-262, 900V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 8 Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 900V. C(in): 490pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 6.8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 54W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 56 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 22/04/2025, 00:25.