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N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V - IRFB4228

N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V - IRFB4228
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Quantity excl. VAT VAT incl.
1 - 1 4.36£ 5.23£
2 - 2 4.14£ 4.97£
3 - 4 3.92£ 4.70£
5 - 9 3.70£ 4.44£
10 - 19 3.62£ 4.34£
20 - 29 3.53£ 4.24£
30 - 40 3.40£ 4.08£
Quantity U.P
1 - 1 4.36£ 5.23£
2 - 2 4.14£ 4.97£
3 - 4 3.92£ 4.70£
5 - 9 3.70£ 4.44£
10 - 19 3.62£ 4.34£
20 - 29 3.53£ 4.24£
30 - 40 3.40£ 4.08£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 40
Set of 1

N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V - IRFB4228. N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 1mA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 4530pF. Cost): 550pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 330A. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 24 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.

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