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Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1176 products available
Products per page :
1...282930 3132...48
Quantity in stock : 259
IRFZ44V

IRFZ44V

N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=...
IRFZ44V
N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1812pF. Cost): 393pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFZ44V
N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1812pF. Cost): 393pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.50£ VAT incl.
(1.25£ excl. VAT)
1.50£
Quantity in stock : 21
IRFZ46N

IRFZ46N

N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=...
IRFZ46N
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
IRFZ46N
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
1.22£ VAT incl.
(1.02£ excl. VAT)
1.22£
Quantity in stock : 11
IRFZ46NL

IRFZ46NL

N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37...
IRFZ46NL
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
IRFZ46NL
N-channel transistor, 37A, 53A, 250uA, 16.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
1.30£ VAT incl.
(1.08£ excl. VAT)
1.30£
Quantity in stock : 209
IRFZ46NPBF

IRFZ46NPBF

N-channel transistor, PCB soldering, TO-220AB, 50V, 50A. Housing: PCB soldering. Housing: TO-220AB. ...
IRFZ46NPBF
N-channel transistor, PCB soldering, TO-220AB, 50V, 50A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 50A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ46NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0165 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1696pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRFZ46NPBF
N-channel transistor, PCB soldering, TO-220AB, 50V, 50A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 50A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ46NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0165 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1696pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
2.12£ VAT incl.
(1.77£ excl. VAT)
2.12£
Quantity in stock : 179
IRFZ48N

IRFZ48N

N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=...
IRFZ48N
N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFZ48N
N-channel transistor, 32A, 64A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.51£ VAT incl.
(1.26£ excl. VAT)
1.51£
Quantity in stock : 364
IRFZ48NPBF

IRFZ48NPBF

N-channel transistor, TO-220AB, 55V, 64A, PCB soldering. Housing: TO-220AB. Drain-source voltage Uds...
IRFZ48NPBF
N-channel transistor, TO-220AB, 55V, 64A, PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 64A. Housing: PCB soldering. Manufacturer's marking: IRFZ48NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 1970pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3
IRFZ48NPBF
N-channel transistor, TO-220AB, 55V, 64A, PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 64A. Housing: PCB soldering. Manufacturer's marking: IRFZ48NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 1970pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3
Set of 1
2.24£ VAT incl.
(1.87£ excl. VAT)
2.24£
Quantity in stock : 70
IRG4BC30U

IRG4BC30U

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing ...
IRG4BC30U
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.59V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
IRG4BC30U
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.59V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
Set of 1
3.80£ VAT incl.
(3.17£ excl. VAT)
3.80£
Quantity in stock : 84
IRG4BC30UD

IRG4BC30UD

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing ...
IRG4BC30UD
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4BC30UD
N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
7.24£ VAT incl.
(6.03£ excl. VAT)
7.24£
Quantity in stock : 30
IRG4BC30W

IRG4BC30W

N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (acco...
IRG4BC30W
N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 600V. C(in): 980pF. Cost): 71pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Function: power MOSFET transistor up to 150 kHz. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG 4BC30W. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). Assembly/installation: PCB through-hole mounting. Td(off): 99 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4BC30W
N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 600V. C(in): 980pF. Cost): 71pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Function: power MOSFET transistor up to 150 kHz. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG 4BC30W. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). Assembly/installation: PCB through-hole mounting. Td(off): 99 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
4.92£ VAT incl.
(4.10£ excl. VAT)
4.92£
Quantity in stock : 16
IRG4PC30KD

IRG4PC30KD

N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing ...
IRG4PC30KD
N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 920pF. Cost): 110pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Germanium diode: no. Collector current: 28A. Ic(pulse): 58A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: UltraFast IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 60 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.21V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC30KD
N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 920pF. Cost): 110pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Germanium diode: no. Collector current: 28A. Ic(pulse): 58A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: UltraFast IGBT transistor. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 60 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.21V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
4.27£ VAT incl.
(3.56£ excl. VAT)
4.27£
Quantity in stock : 48
IRG4PC30UD

IRG4PC30UD

N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing...
IRG4PC30UD
N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4PC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC30UD
N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Germanium diode: no. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4PC30UD. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
8.53£ VAT incl.
(7.11£ excl. VAT)
8.53£
Quantity in stock : 83
IRG4PC40FDPBF

IRG4PC40FDPBF

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing ...
IRG4PC40FDPBF
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. C(in): 2200pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: TO-247AC. Conditioning unit: PCB through-hole mounting. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 49A. Ic(pulse): 84A. Marking on the case: 230 ns. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40FDPBF
N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. C(in): 2200pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: TO-247AC. Conditioning unit: PCB through-hole mounting. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 49A. Ic(pulse): 84A. Marking on the case: 230 ns. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
7.93£ VAT incl.
(6.61£ excl. VAT)
7.93£
Quantity in stock : 71
IRG4PC40K

IRG4PC40K

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing ...
IRG4PC40K
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Marking on the case: G4PC40K. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40K
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Marking on the case: G4PC40K. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
6.30£ VAT incl.
(5.25£ excl. VAT)
6.30£
Quantity in stock : 51
IRG4PC40KD

IRG4PC40KD

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing ...
IRG4PC40KD
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40KD
N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 42 ns. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 42A. Ic(pulse): 84A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
6.31£ VAT incl.
(5.26£ excl. VAT)
6.31£
Quantity in stock : 3
IRG4PC40U

IRG4PC40U

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing ...
IRG4PC40U
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
IRG4PC40U
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ultra Fast, for high operating frequencies 8-40kHz. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V
Set of 1
6.47£ VAT incl.
(5.39£ excl. VAT)
6.47£
Quantity in stock : 10
IRG4PC40W

IRG4PC40W

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing ...
IRG4PC40W
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1900pF. Cost): 140pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC40W
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1900pF. Cost): 140pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
8.23£ VAT incl.
(6.86£ excl. VAT)
8.23£
Quantity in stock : 4
IRG4PC60FP

IRG4PC60FP

N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing ...
IRG4PC60FP
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 6050pF. Cost): 360pF. CE diode: no. Channel type: N. Function: 'Fast Speed ​​IGBT'. Germanium diode: no. Collector current: 90A. Ic(pulse): 360A. Number of terminals: 3. Pd (Power Dissipation, Max): 520W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Td(on): 42 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PC60FP
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 6050pF. Cost): 360pF. CE diode: no. Channel type: N. Function: 'Fast Speed ​​IGBT'. Germanium diode: no. Collector current: 90A. Ic(pulse): 360A. Number of terminals: 3. Pd (Power Dissipation, Max): 520W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Td(on): 42 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
11.14£ VAT incl.
(9.28£ excl. VAT)
11.14£
Quantity in stock : 35
IRG4PH40U

IRG4PH40U

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-2...
IRG4PH40U
N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH40U
N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
6.25£ VAT incl.
(5.21£ excl. VAT)
6.25£
Quantity in stock : 32
IRG4PH50K

IRG4PH50K

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50K
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50K
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. CE diode: no. Channel type: N. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
8.26£ VAT incl.
(6.88£ excl. VAT)
8.26£
Quantity in stock : 12
IRG4PH50KD

IRG4PH50KD

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50KD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50KD
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 90A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
16.63£ VAT incl.
(13.86£ excl. VAT)
16.63£
Quantity in stock : 36
IRG4PH50U

IRG4PH50U

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-2...
IRG4PH50U
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
IRG4PH50U
N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 3600pF. Cost): 160pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Germanium diode: no. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V
Set of 1
8.82£ VAT incl.
(7.35£ excl. VAT)
8.82£
Quantity in stock : 48
IRGB15B60KD

IRGB15B60KD

N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (acco...
IRGB15B60KD
N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 850pF. Cost): 75pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Germanium diode: no. Collector current: 31A. Ic(pulse): 62A. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: Ultrafast Soft Recovery Diode. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V
IRGB15B60KD
N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 850pF. Cost): 75pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Germanium diode: no. Collector current: 31A. Ic(pulse): 62A. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Spec info: Ultrafast Soft Recovery Diode. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V
Set of 1
6.49£ VAT incl.
(5.41£ excl. VAT)
6.49£
Quantity in stock : 15
IRGP4068D

IRGP4068D

N-channel transistor, 48A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 48A. Housing: TO-247. Housing ...
IRGP4068D
N-channel transistor, 48A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 48A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3025pF. Cost): 245pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Germanium diode: no. Collector current: 90A. Ic(pulse): 144A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v
IRGP4068D
N-channel transistor, 48A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 48A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3025pF. Cost): 245pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Germanium diode: no. Collector current: 90A. Ic(pulse): 144A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v
Set of 1
11.12£ VAT incl.
(9.27£ excl. VAT)
11.12£
Quantity in stock : 31
IRGP4086

IRGP4086

N-channel transistor, 40A, TO-247, TO-247 ( AC ), 300V. Ic(T=100°C): 40A. Housing: TO-247. Housing ...
IRGP4086
N-channel transistor, 40A, TO-247, TO-247 ( AC ), 300V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 300V. C(in): 2250pF. Cost): 110pF. CE diode: no. Channel type: N. Conditioning unit: 25. Germanium diode: no. Collector current: 70A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 36ns. Operating temperature: -40...+140°C. Saturation voltage VCE(sat): 1.29V. Maximum saturation voltage VCE(sat): 2.57V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.6V. Gate/emitter voltage VGE(th)max.: 5V
IRGP4086
N-channel transistor, 40A, TO-247, TO-247 ( AC ), 300V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 300V. C(in): 2250pF. Cost): 110pF. CE diode: no. Channel type: N. Conditioning unit: 25. Germanium diode: no. Collector current: 70A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 36ns. Operating temperature: -40...+140°C. Saturation voltage VCE(sat): 1.29V. Maximum saturation voltage VCE(sat): 2.57V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.6V. Gate/emitter voltage VGE(th)max.: 5V
Set of 1
6.64£ VAT incl.
(5.53£ excl. VAT)
6.64£
Quantity in stock : 49
IRL1004S

IRL1004S

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 130A. Housing: PCB soldering (SMD)....
IRL1004S
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 130A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 130A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L1004S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0065 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 5330pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
IRL1004S
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 130A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 130A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L1004S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0065 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 5330pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
3.47£ VAT incl.
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