N-channel FETs and MOSFETs

N-channel transistor, 8.7A, 14A, 250uA, 0.4 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 8.7A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 2600pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 540 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92us. Td(on): 17us. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 8.6A, 14A, 250uA, 0.4 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 8.6A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 2200pF. Cost): 320pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 580us. Type of transistor: MOSFET. Function: Ultra low Gate Charger. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering, TO-247, 500V, 14A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP450LCPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 2200pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-247, 500V, 14A, 180W. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 14A. Housing (JEDEC standard): 180W. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP450PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 92 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 121A, 694A, 250uA, 0.0048 Ohms, TO-247, TO-247AC, 150V. ID (T=100°C): 121A. ID (T=25°C): 694A. Idss (max): 250uA. On-resistance Rds On: 0.0048 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 150V. C(in): 10470pF. Cost): 977pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 171A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 517W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 27 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 13A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 4200pF. Cost): 870pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, TO-247, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V. Housing: TO-247. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. RoHS: yes. C(in): 3100pF. Cost): 480pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 13A, 20A, 10uA, 0.20 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. Cost): 152pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 437ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 62A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 278W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 117 ns. Td(on): 24 ns. Technology: D Series Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 3940pF. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 12A, 20A, 250uA, 0.27 Ohms, TO-247, TO-247AC, 500V. ID (T=100°C): 12A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. C(in): 3600pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 18 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: fast Switching, Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP460LCPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 40 ns. Maximum dissipation Ptot [W]: 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Ciss Gate Capacitance [pF]: 3600pF

N-channel transistor, 500V, 20A, TOP-3 (TO-247), 500V. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. Housing: TOP-3 (TO-247). Drain-source voltage (Vds): 500V. Number of terminals: 3. Manufacturer's marking: IRFP460PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 280W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 20A. Power: 250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 92A, 130A, 0.1mA, 130A, 0.008 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 92A. ID (T=25°C): 130A. Idss: 0.1mA. Idss (max): 130A. On-resistance Rds On: 0.008 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 520A. Pd (Power Dissipation, Max): 520W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 51A, 72A, 250uA, 72A, 0.011 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 51A. ID (T=25°C): 72A. Idss: 250uA. Idss (max): 72A. On-resistance Rds On: 0.011 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 6160pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Power-MOSFET. Id(imp): 300A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 190W. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET® Power MOSFET. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 3.5V. Vgs(th) max.: 5.5V. Note: High Frequency. Drain-source protection : yes. G-S Protection: no

N-channel transistor, TO-247AC, 100V, 72A, 0.014 Ohms, 100V. Housing: TO-247AC. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 72A. On-resistance Rds On: 0.014 Ohms. Drain-source voltage (Vds): 100V. Manufacturer's marking: IRFP4710PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 45A. Gate breakdown voltage Ugs [V]: 5.5V. Switch-on time ton [nsec.]: 35 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 6160pF. Maximum dissipation Ptot [W]: 190W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 72A. Power: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 66A, 94A, 250uA, 0.023 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 66A. ID (T=25°C): 94A. Idss (max): 250uA. On-resistance Rds On: 0.023 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 1070pF. Cost): 6040pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 380A. IDss (min): 25uA. Pd (Power Dissipation, Max): 580W. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AC, 200V, 94A, 580W. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 94A. Housing (JEDEC standard): 580W. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP90N20DPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 56A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 580W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 7A, 11A, 500uA, 0.6 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 500uA. On-resistance Rds On: 0.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 2700pF. Cost): 300pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 88 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 7A, 11A, 250uA, 0.58 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 2100pF. Cost): 270pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. IDss (min): 25uA-. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AC, 600V, 11A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPC50PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 88 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25°C): 16A. Idss (max): 500uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 3900pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 64A. IDss (min): 100uA. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 19 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 3.4A. ID (T=25°C): 5.4A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 1900pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Id(imp): 22A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: fast switching, ORION TV. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AC, 800V, 5.4A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 5.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPE40PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 1.2 Ohms, TO-247AC HV, 800V. On-resistance Rds On: 1.2 Ohms. Housing: TO-247AC HV. Drain-source voltage (Vds): 800V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 7.8A. Power: 190W

N-channel transistor, 4.7A, 4.7A, TO-247, TO-247AC, 900V. ID (T=25°C): 4.7A. Idss (max): 4.7A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: <63/214ns. Assembly/installation: PCB through-hole mounting. Technology: V-MOS L