N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V - IRG4PH50KD

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V - IRG4PH50KD. N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Collector current: 45A. Ic(pulse): 90A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). CE diode: yes. Germanium diode: no. Quantity in stock updated on 22/04/2025, 00:25.