N-channel FETs and MOSFETs

N-channel transistor, 140A, 200A, 20uA, 200A, 2.5M Ohms, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 40V. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss: 20uA. Idss (max): 200A. On-resistance Rds On: 2.5M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 40V. C(in): 5080pF. Cost): 970pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 790A. Pd (Power Dissipation, Max): 230W. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. G-S Protection: no

N-channel transistor, 60A, 116A, 250uA, 0.07 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 60A. ID (T=25°C): 116A. Idss (max): 250uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 3290pF. Cost): 1270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 400A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 30 v, 100A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 100A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL2203NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 30 v, 75A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2203NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 30 v, 75A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2203NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 74A, 104A, 104A, 0.008 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 104A. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 360A. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 104A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 104A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2505S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 54A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 39A, 55A, 250uA, 0.026 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 0.026 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 3700pF. Cost): 630pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 190A. IDss (min): 10uA. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering, TO-220AB, 20V, 110A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 110A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL3502. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 64A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 96 ns. Ciss Gate Capacitance [pF]: 4700pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 20V, 110A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 110A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L3502S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 64A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 96 ns. Ciss Gate Capacitance [pF]: 4700pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 63A, 89A, 250uA, 0.01 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 63A. ID (T=25°C): 89A. Idss (max): 250uA. On-resistance Rds On: 0.01 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3600pF. Cost): 870pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 94us. Type of transistor: MOSFET. Id(imp): 310A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 37 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/emitter voltage VGE(th)max.: 2V. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Function: Logic-Level Gate Drive, Fast Switching. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 55V, 89A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 89A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL3705N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ 46A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 37 ns. Maximum dissipation Ptot [W]: 170W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Ciss Gate Capacitance [pF]: 3600pF

N-channel transistor, 180A, 260A, 100uA, 0.003 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 100uA. On-resistance Rds On: 0.003 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5890pF. Cost): 3130pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Id(imp): 1040A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 16 ns. Technology: SMPS MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Function: very Low Rds. G-S Protection: no

N-channel transistor, 170A, 200A, 200A, 0.003 Ohms, 30 v. ID (T=100°C): 170A. ID (T=25°C): 200A. Idss (max): 200A. On-resistance Rds On: 0.003 Ohms. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Very low Rds-on on-resistance. Pd (Power Dissipation, Max): 200W. Technology: SMPS MOSFET. Note: UltraLow Gate

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 30 v, 260A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 260A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L3713S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 30A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 5890pF. Maximum dissipation Ptot [W]: 170W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 98A, 140A, 250uA, 0.006 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 98A. ID (T=25°C): 140A. Idss (max): 250uA. On-resistance Rds On: 0.006 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 470A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. G-S Protection: no

N-channel transistor, TO-220AB, 30 v, 140A, 0.006 Ohms, 30V. Housing: TO-220AB. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 140A. On-resistance Rds On: 0.006 Ohms. Drain-source voltage (Vds): 30V. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.006 Ohms @ 71A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 200W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 140A. Power: 200W. Control: Logic-Level. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 83A, 60.4k Ohms, 250uA, 0.006 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 83A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. On-resistance Rds On: 0.006 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 470A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 1V. Vgs(th) min.: 1V. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 30 v, 140A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 140A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L3803S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.006 Ohms @ 71A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK/7, 40V, 360A. Housing: PCB soldering (SMD). Housing: D²-PAK/7. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 360A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0005 Ohms @ 100A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 67 ns. Switch-off delay tf[nsec.]: 222 ns. Ciss Gate Capacitance [pF]: 19680pF. Maximum dissipation Ptot [W]: 416W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 7.1A, 10A, 10A, 0.18 Ohms, 100V. ID (T=100°C): 7.1A. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.18 Ohms. Voltage Vds(max): 100V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 35A. Note: Logic-Level. Pd (Power Dissipation, Max): 48W. Technology: V-MOS TO220A

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 10A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L520N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 4 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 440pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 12A, 17A, 250uA, 0.10 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 800pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 7.2 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Technology: HEXFET Power MOSFET transistor, logic level controlled. Spec info: Gate control by logic level. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 100V, 17A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL530NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.2 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 800 ns. Maximum dissipation Ptot [W]: 79W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 1.3A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L530NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.2 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 800 ns. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C