N-channel FETs and MOSFETs

N-channel transistor, TO-220AB, 55V, 64A, 0.014 Ohms, 55V. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 64A. On-resistance Rds On: 0.014 Ohms. Drain-source voltage (Vds): 55V. Manufacturer's marking: IRFZ48NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 1970pF. Maximum dissipation Ptot [W]: 130W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 64A. Power: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Collector current: 23A. Ic(pulse): 92A. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.59V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Number of terminals: 3. CE diode: no. Germanium diode: no

N-channel transistor, 12A, TO-220, TO-220 ( AB ), 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4BC30UD. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no

N-channel transistor, 12A, TO-220, TO-220AB, 600V. Ic(T=100°C): 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 600V. C(in): 980pF. Cost): 71pF. Channel type: N. Conditioning: plastic tube. Function: power MOSFET transistor up to 150 kHz. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG 4BC30W. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 99 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 50. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). CE diode: no. Germanium diode: no

N-channel transistor, 16A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 16A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 920pF. Cost): 110pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Collector current: 28A. Ic(pulse): 58A. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 60 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.21V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Spec info: UltraFast IGBT transistor. CE diode: yes. Germanium diode: no

N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. ID (T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 73pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Collector current: 23A. Ic(pulse): 92A. Marking on the case: IRG4PC30UD. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2200pF. Cost): 140pF. Channel type: N. Conditioning: TO-247AC. Conditioning unit: PCB through-hole mounting. Trr Diode (Min.): 42 ns. Collector current: 49A. Ic(pulse): 84A. Marking on the case: 230 ns. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: yes. Germanium diode: no

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 42A. Ic(pulse): 84A. Marking on the case: G4PC40K. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: no. Germanium diode: no

N-channel transistor, 25A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1600pF. Cost): 130pF. Channel type: N. Trr Diode (Min.): 42 ns. Collector current: 42A. Ic(pulse): 84A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: yes. Germanium diode: no

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 2100pF. Cost): 140pF. Channel type: N. Collector current: 40A. Ic(pulse): 160A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Number of terminals: 3. Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: no. Germanium diode: no

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1900pF. Cost): 140pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 40A. Ic(pulse): 160A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: no. Germanium diode: no

N-channel transistor, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3700pF. Cost): 260pF. Channel type: N. Conditioning: plastic tube. Collector current: 55A. Ic(pulse): 220A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 46 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.93V. Maximum saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 25. CE diode: no. Germanium diode: no

N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 6050pF. Channel type: N. Function: 'Fast Speed ​​IGBT'. Collector current: 90A. Ic(pulse): 360A. Pd (Power Dissipation, Max): 520W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Td(on): 42 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Cost): 360pF. CE diode: no. Germanium diode: no

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Collector current: 41A. Ic(pulse): 82A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: no. Germanium diode: no

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. Channel type: N. Collector current: 45A. Ic(pulse): 90A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. CE diode: no. Germanium diode: no

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. C(in): 2800pF. Cost): 140pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Collector current: 45A. Ic(pulse): 90A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). CE diode: yes. Germanium diode: no

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). C(in): 3600pF. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. CE diode: no. Germanium diode: no

N-channel transistor, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. C(in): 850pF. Cost): 75pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Collector current: 31A. Ic(pulse): 62A. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Number of terminals: 3. Spec info: Ultrafast Soft Recovery Diode. CE diode: yes. Germanium diode: no

N-channel transistor, 48A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 48A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 3025pF. Cost): 245pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 90A. Ic(pulse): 144A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v. Number of terminals: 3. CE diode: yes. Germanium diode: no

N-channel transistor, 40A, TO-247, TO-247 ( AC ), 300V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 300V. C(in): 2250pF. Cost): 110pF. Channel type: N. Conditioning unit: 25. Collector current: 70A. Ic(pulse): 250A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 36ns. Operating temperature: -40...+140°C. Saturation voltage VCE(sat): 1.29V. Maximum saturation voltage VCE(sat): 2.57V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.6V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. CE diode: no. Germanium diode: no

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 40V, 130A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 130A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L1004S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0065 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 5330pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 110A, 160A, 250uA, 0.004 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 0.004 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 6590pF. Cost): 1710pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 640A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.004 Ohms, TO-220AB, 40V. On-resistance Rds On: 0.004 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 40V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 160A. Power: 200W

N-channel transistor, 140A, 200A, 200A, 0.005 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss (max): 200A. On-resistance Rds On: 0.005 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 790A. Pd (Power Dissipation, Max): 230W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: Fast Switching, Logic-Level Gate Drive

N-channel transistor, PCB soldering, TO-220AB, 40V, 140A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 140A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL1404ZPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.003 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 5080pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C