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N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH50U

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH50U
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Quantity excl. VAT VAT incl.
1 - 1 7.35£ 8.82£
2 - 2 6.98£ 8.38£
3 - 4 6.61£ 7.93£
5 - 9 6.25£ 7.50£
10 - 19 6.10£ 7.32£
20 - 29 5.95£ 7.14£
30 - 36 5.73£ 6.88£
Quantity U.P
1 - 1 7.35£ 8.82£
2 - 2 6.98£ 8.38£
3 - 4 6.61£ 7.93£
5 - 9 6.25£ 7.50£
10 - 19 6.10£ 7.32£
20 - 29 5.95£ 7.14£
30 - 36 5.73£ 6.88£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 36
Set of 1

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH50U. N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 45A. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). C(in): 3600pF. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. CE diode: no. Germanium diode: no. Quantity in stock updated on 22/04/2025, 01:25.

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