N-channel FETs and MOSFETs

N-channel transistor, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V. ID (T=100°C): 4.2A. ID (T=25°C): 6.7A. Idss (max): 500uA. On-resistance Rds On: 1.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. C(in): 2900pF. Cost): 270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering, TO-247AC, 900V, 6.7A. Housing: PCB soldering. Housing: TO-247AC. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 6.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPF50PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.6 Ohms @ 4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 2900pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no

N-channel transistor, TO-247AC, 2 Ohms, 1000V. Housing: TO-247AC. On-resistance Rds On: 2 Ohms. Drain-source voltage (Vds): 1000V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 6.1A. Power: 190W

N-channel transistor, 23A, 36A, 250uA, 0.13 Ohms, 17.4k Ohms, SUPER247, 500V. ID (T=100°C): 23A. ID (T=25°C): 36A. Idss (max): 250uA. On-resistance Rds On: 0.13 Ohms. Housing: 17.4k Ohms. Housing (according to data sheet): SUPER247. Voltage Vds(max): 500V. C(in): 5579pF. Cost): 810pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 144A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 23 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, 17.4k Ohms, 500V, 36A. Housing: PCB soldering. Housing: 17.4k Ohms. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 36A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPS37N50APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 5580pF. Maximum dissipation Ptot [W]: 446W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 12A, 17A, 250uA, 0.075 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 17A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 14A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 180pF. Cost): 80pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 17A. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 4.3A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 4.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR110PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 31A, 44A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.027 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1300pF. Cost): 410pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 65 ns. Type of transistor: MOSFET. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 47 ns. Td(on): 7.3 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+155°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 55V, 44A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 44A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.027 Ohms @ 26A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.3 ns. Switch-off delay tf[nsec.]: 47 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 100V, 6.6A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 6.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.21 Ohms @ 5.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.5 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 200V, 5A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR220N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.4 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 43W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 2A, 3.1A, 3.1A, 1.8 Ohms, D-PAK TO-252AA, 400V. ID (T=100°C): 2A. ID (T=25°C): 3.1A. Idss (max): 3.1A. On-resistance Rds On: 1.8 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 400V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 42W. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET

N-channel transistor, 49A, 71A, 250uA, 0.011 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 49A. ID (T=25°C): 71A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 2030pF. Cost): 470pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Id(imp): 280A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 13 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: AUTOMOTIVE MOSFET. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. On-resistance Rds On: 5.2m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 2330pF. Cost): 460pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Id(imp): 340A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Spec info: AUTOMOTIVE MOSFET. Function: Ultra Low On-Resistance, Ultra-Low Gate Impedance. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 12A, 16A, 250uA, 0.115 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 12A. ID (T=25°C): 16A. Idss (max): 250uA. On-resistance Rds On: 0.115 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 640pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60A. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 37 ns. Td(on): 6.4 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 19A, 27A, 0.025mA, 27A, 0.045 Ohms, D-PAK TO-252AA, 55V. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss: 0.025mA. Idss (max): 27A. On-resistance Rds On: 0.045 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: td(on) 7ns. Id(imp): 100A. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

N-channel transistor, 1.5A, 2.4A, 0.025mA, 250uA, 3 Ohms, D-PAK TO-252AA, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 500V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=100°C): 1.3A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 600V, 2A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFRC20PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 4.4 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 4.1A, 6.5A, 6.5A, 0.34 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 6.5A. On-resistance Rds On: 0.34 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 26A. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET. Function: Low gate charge (typical 22nC), Low Crss