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N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V - IRFPG50

N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V - IRFPG50
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Quantity excl. VAT VAT incl.
1 - 1 4.46£ 5.35£
2 - 2 4.24£ 5.09£
3 - 4 4.01£ 4.81£
5 - 9 3.79£ 4.55£
10 - 19 3.70£ 4.44£
20 - 29 3.61£ 4.33£
30 - 52 3.48£ 4.18£
Quantity U.P
1 - 1 4.46£ 5.35£
2 - 2 4.24£ 5.09£
3 - 4 4.01£ 4.81£
5 - 9 3.79£ 4.55£
10 - 19 3.70£ 4.44£
20 - 29 3.61£ 4.33£
30 - 52 3.48£ 4.18£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 52
Set of 1

N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V - IRFPG50. N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 22/04/2025, 03:25.

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