Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.88£ | 1.06£ |
5 - 9 | 0.84£ | 1.01£ |
10 - 24 | 0.79£ | 0.95£ |
25 - 49 | 0.75£ | 0.90£ |
50 - 99 | 0.73£ | 0.88£ |
100 - 102 | 0.71£ | 0.85£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.88£ | 1.06£ |
5 - 9 | 0.84£ | 1.01£ |
10 - 24 | 0.79£ | 0.95£ |
25 - 49 | 0.75£ | 0.90£ |
50 - 99 | 0.73£ | 0.88£ |
100 - 102 | 0.71£ | 0.85£ |
N-channel transistor, 31A, 44A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR1205. N-channel transistor, 31A, 44A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.027 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1300pF. Cost): 410pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 65 ns. Type of transistor: MOSFET. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 47 ns. Td(on): 7.3 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+155°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Quantity in stock updated on 22/04/2025, 04:25.
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