N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V - IRFR110

Quantity	excl. VAT	VAT incl.
1 - 4	0.68£	0.82£
5 - 9	0.64£	0.77£
10 - 24	0.61£	0.73£
25 - 49	0.58£	0.70£
50 - 99	0.56£	0.67£
100 - 120	0.55£	0.66£

Quantity	U.P
1 - 4	0.68£	0.82£
5 - 9	0.64£	0.77£
10 - 24	0.61£	0.73£
25 - 49	0.58£	0.70£
50 - 99	0.56£	0.67£
100 - 120	0.55£	0.66£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 120

Set of 1

N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V - IRFR110. N-channel transistor, 2.7A, 4.3A, 250uA, 0.54 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 180pF. Cost): 80pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 17A. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 22/04/2025, 04:25.

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