N-channel FETs and MOSFETs

N-channel transistor, 22A, 39A, 39A, 40m Ohms, 50V. ID (T=100°C): 22A. ID (T=25°C): 39A. Idss (max): 39A. On-resistance Rds On: 40m Ohms. Voltage Vds(max): 50V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 125W. Technology: V-MOS S/L. Note: 250/500ns. Quantity per case: 1

N-channel transistor, PCB soldering, TO-220AB, 100V, 34A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 34A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ22. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 34A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 300 ns. Ciss Gate Capacitance [pF]: 1850pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.6A, 2.6A, 1000V. ID (T=25°C): 2.6A. Idss (max): 2.6A. Voltage Vds(max): 1000V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 78W. Technology: V-MOS L. Quantity per case: 1

N-channel transistor, 7A, 11A, 250uA, 0.23 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.23 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 330pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 44A. Temperature: +175°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 10 ns. Technology: Enhancement Mode Power MOSFET Transistor. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 200V, 7A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ73LH. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 840pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.5A, 2.4A, 2.4A, 3 Ohms, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss (max): 2.4A. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 500V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS. Quantity per case: 1

N-channel transistor, 2A, 3A, 3A, 1.8 Ohms, 400V. ID (T=100°C): 2A. ID (T=25°C): 3A. Idss (max): 3A. On-resistance Rds On: 1.8 Ohms. Voltage Vds(max): 400V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS. Note: <57/115ns. Quantity per case: 1

N-channel transistor, PCB soldering, TO-220AB, 400V, 2.7A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 2.7A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ76A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 1.7A, 2.7A, 2.7A, 4 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 1.7A. ID (T=25°C): 2.7A. Idss (max): 2.7A. On-resistance Rds On: 4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: <50/105ns. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Quantity per case: 1

N-channel transistor, 1.7A, 2.9A, 100uA, 3 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 1.7A. ID (T=25°C): 2.9A. Idss (max): 100uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 460pF. Cost): 55pF. Channel type: N. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Function: BSIPMOS® Power Transistor, Enhancement mode. Id(imp): 11.5A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 75W. Td(off): 50 ns. Td(on): 8 ns. Technology: V-MOS. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Quantity per case: 1

N-channel transistor, 1.5A, 2.1A, 2.1A, 3 Ohms, 800V. ID (T=100°C): 1.5A. ID (T=25°C): 2.1A. Idss (max): 2.1A. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS (F). Note: <100/220ns. Quantity per case: 1

N-channel transistor, 3.2A, 3.2A, 800V. ID (T=25°C): 3.2A. Idss (max): 3.2A. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Function: V-MOS. Pd (Power Dissipation, Max): 78W. Quantity per case: 1

N-channel transistor, 2.8A, 4.5A, 4.5A, 1.6 Ohms, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 4.5A. On-resistance Rds On: 1.6 Ohms. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 75W. Technology: V-MOS. Quantity per case: 1

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Number of terminals: 3. Quantity per case: 1

N-channel transistor, 2.8A, 4A, 4A, 2 Ohms, 600V. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 2 Ohms. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 35W. Technology: TO-220F. Quantity per case: 1

N-channel transistor, 5A, 8A, 8A, 0.9 Ohms, TO-220, 600V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 0.9 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Quantity per case: 1

N-channel transistor, 5A, 8A, 10uA, 0.9 Ohms, TO-220, 600V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 10uA. On-resistance Rds On: 0.9 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 32A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 150W. Technology: V-MOS

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET

N-channel transistor, 200A, Other, Other, 1200V. Ic(T=100°C): 200A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 40pF. Cost): 14pF. Channel type: N. Function: Dual IGBT transistor (Isolated). Collector current: 200A. Ic(pulse): 400A. Dimensions: 108x62x31mm. Pd (Power Dissipation, Max): 1500W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 250 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Number of terminals: 7. Spec info: High Power Switching. CE diode: no. Germanium diode: no

N-channel transistor, 5A, 1uA, 0.024...0.042 Ohms, WSON6, 2mm × 2mm plastic case, 30 v. ID (T=25°C): 5A. Idss (max): 1uA. On-resistance Rds On: 0.024...0.042 Ohms. Housing: WSON6. Housing (according to data sheet): 2mm × 2mm plastic case. Voltage Vds(max): 30 v. C(in): 260pF. Cost): 140pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 57A. Number of terminals: 6. Temperature: +150°C. Pd (Power Dissipation, Max): 17W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 4.2 ns. Td(on): 2.8 ns. Technology: N-Channel NexFET™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.9V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 600A, Other, Other, 1200V. Ic(T=100°C): 600A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 37pF. Channel type: N. Collector current: 600A. Ic(pulse): 1200A. Dimensions: 172x89x37mm. Pd (Power Dissipation, Max): 3350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.7 ns. Td(on): 0.21 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. Number of terminals: 10. Spec info: ICRM--Tp=1mS 1200A. Function: VCE(sat) 1.7V (Ic=600A, VGE=15V, 25°C). CE diode: yes. Germanium diode: no

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 6A/-4.2A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 6A/-4.2A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: C3025LS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms/0.05 Ohms @ 6/-4.2A. Gate breakdown voltage Ugs [V]: 1.2V/-2V. Switch-on time ton [nsec.]: 11.2 ns/7.5 ns. Switch-off delay tf[nsec.]: 14.5/28.2 ns. Ciss Gate Capacitance [pF]: 590/631pF. Maximum dissipation Ptot [W]: 1.5W. Component family: MOSFET, 2 x N-MOS, 2 x P-MOS. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 900pF. Cost): 500pF. Channel type: N. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 155 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V. Spec info: complementary transistor (pair) ECW20P20. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: N. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V. Spec info: complementary transistor (pair) ECX10P20. Drain-source protection : no. G-S Protection: no

N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no