N-channel transistor, 200A, Other, Other, 1200V - CM200DY-24H

N-channel transistor, 200A, Other, Other, 1200V - CM200DY-24H. N-channel transistor, 200A, Other, Other, 1200V. Ic(T=100°C): 200A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 40pF. Cost): 14pF. CE diode: no. Channel type: N. Function: Dual IGBT transistor (Isolated). Germanium diode: no. Collector current: 200A. Ic(pulse): 400A. Number of terminals: 7. Dimensions: 108x62x31mm. Pd (Power Dissipation, Max): 1500W. RoHS: yes. Spec info: High Power Switching. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 250 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Original product from manufacturer Mitsubishi Electric Semiconductor. Quantity in stock updated on 08/06/2025, 00:25.