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Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1207 products available
Products per page :
1...101112 1314...49
Quantity in stock : 69
FDS6670A

FDS6670A

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13A. Housing: PCB soldering (SMD). Housing: SO...
FDS6670A
N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6670A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 2220pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FDS6670A
N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6670A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 2220pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.89£ VAT incl.
(2.41£ excl. VAT)
2.89£
Quantity in stock : 133
FDS6690A

FDS6690A

N-channel transistor, 11A, 10uA, 9.8m Ohms, SO, SO-8, 30 v. ID (T=25°C): 11A. Idss (max): 10uA. On-...
FDS6690A
N-channel transistor, 11A, 10uA, 9.8m Ohms, SO, SO-8, 30 v. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 9.8m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1205pF. Cost): 290pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 9 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Function: logic level control. Drain-source protection : yes. G-S Protection: no
FDS6690A
N-channel transistor, 11A, 10uA, 9.8m Ohms, SO, SO-8, 30 v. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 9.8m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1205pF. Cost): 290pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 9 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Function: logic level control. Drain-source protection : yes. G-S Protection: no
Set of 1
1.19£ VAT incl.
(0.99£ excl. VAT)
1.19£
Quantity in stock : 107
FDS6900AS

FDS6900AS

N-channel transistor, PCB soldering (SMD), SO8, 8.2A, 30 v, 8.2A/6.9A. Housing: PCB soldering (SMD)....
FDS6900AS
N-channel transistor, PCB soldering (SMD), SO8, 8.2A, 30 v, 8.2A/6.9A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): 8.2A. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 8.2A/6.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6900AS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms / 0.038 Ohms @ 8.2/6.9A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 570pF/600pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FDS6900AS
N-channel transistor, PCB soldering (SMD), SO8, 8.2A, 30 v, 8.2A/6.9A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): 8.2A. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 8.2A/6.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6900AS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms / 0.038 Ohms @ 8.2/6.9A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 570pF/600pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.20£ VAT incl.
(1.83£ excl. VAT)
2.20£
Quantity in stock : 162
FDS6912

FDS6912

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 6A/6A. Housing: PCB soldering (SMD). Housing: ...
FDS6912
N-channel transistor, PCB soldering (SMD), SO8, 30 v, 6A/6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6A/6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6912. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms/0.028 Ohms @ 6A/6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 740pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
FDS6912
N-channel transistor, PCB soldering (SMD), SO8, 30 v, 6A/6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6A/6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6912. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms/0.028 Ohms @ 6A/6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 740pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
1.80£ VAT incl.
(1.50£ excl. VAT)
1.80£
Quantity in stock : 2192
FDS8884

FDS8884

N-channel transistor, 30A, 8.5A, 250uA, 19m Ohms, SO, SO-8, 30 v. ID (T=100°C): 30A. ID (T=25°C): ...
FDS8884
N-channel transistor, 30A, 8.5A, 250uA, 19m Ohms, SO, SO-8, 30 v. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. On-resistance Rds On: 19m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 475pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 40A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
FDS8884
N-channel transistor, 30A, 8.5A, 250uA, 19m Ohms, SO, SO-8, 30 v. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. On-resistance Rds On: 19m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 475pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 40A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
0.65£ VAT incl.
(0.54£ excl. VAT)
0.65£
Quantity in stock : 2377
FDS9926A

FDS9926A

N-channel transistor, 5.4A, SO, SO-8. ID (T=100°C): 5.4A. Housing: SO. Housing (according to data s...
FDS9926A
N-channel transistor, 5.4A, SO, SO-8. ID (T=100°C): 5.4A. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Trr Diode (Min.): 15 ns. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Quantity per case: 2. Function: Rds-on 0.030 Ohms. Drain-source protection : yes. G-S Protection: no
FDS9926A
N-channel transistor, 5.4A, SO, SO-8. ID (T=100°C): 5.4A. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Trr Diode (Min.): 15 ns. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Quantity per case: 2. Function: Rds-on 0.030 Ohms. Drain-source protection : yes. G-S Protection: no
Set of 1
0.92£ VAT incl.
(0.77£ excl. VAT)
0.92£
Quantity in stock : 33616
FDV301N

FDV301N

N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.22A. Housing: PCB soldering (SMD). Housing...
FDV301N
N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.22A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.22A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 301. Drain current through resistor Rds [Ohm] @ Ids [A]: 4 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 301. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 8 ns. Ciss Gate Capacitance [pF]: 9.5pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FDV301N
N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.22A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.22A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 301. Drain current through resistor Rds [Ohm] @ Ids [A]: 4 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 301. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 8 ns. Ciss Gate Capacitance [pF]: 9.5pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.11£ VAT incl.
(0.09£ excl. VAT)
0.11£
Quantity in stock : 19459
FDV303N

FDV303N

N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.68A. Housing: PCB soldering (SMD). Housing...
FDV303N
N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.68A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.68A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 303. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.44 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 1V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FDV303N
N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.68A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.68A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 303. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.44 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 1V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.31£ VAT incl.
(0.26£ excl. VAT)
0.31£
Quantity in stock : 38
FGA60N65SMD

FGA60N65SMD

N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ...
FGA60N65SMD
N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no
FGA60N65SMD
N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no
Set of 1
9.48£ VAT incl.
(7.90£ excl. VAT)
9.48£
Quantity in stock : 31
FGB20N60SF

FGB20N60SF

N-channel transistor, 20A, D2PAK ( TO-263 ), D2-PAK, 600V. Ic(T=100°C): 20A. Housing: D2PAK ( TO-26...
FGB20N60SF
N-channel transistor, 20A, D2PAK ( TO-263 ), D2-PAK, 600V. Ic(T=100°C): 20A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2-PAK. Collector/emitter voltage Vceo: 600V. C(in): 940pF. Cost): 110pF. Channel type: N. Collector current: 40A. Ic(pulse): 60A. Marking on the case: FGB20N60SF. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 12 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 2. Function: solar inverter, UPS, welding machine, PFC. Note: N-channel MOS IGBT transistor. CE diode: no. Germanium diode: no
FGB20N60SF
N-channel transistor, 20A, D2PAK ( TO-263 ), D2-PAK, 600V. Ic(T=100°C): 20A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2-PAK. Collector/emitter voltage Vceo: 600V. C(in): 940pF. Cost): 110pF. Channel type: N. Collector current: 40A. Ic(pulse): 60A. Marking on the case: FGB20N60SF. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 12 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 2. Function: solar inverter, UPS, welding machine, PFC. Note: N-channel MOS IGBT transistor. CE diode: no. Germanium diode: no
Set of 1
6.91£ VAT incl.
(5.76£ excl. VAT)
6.91£
Quantity in stock : 28
FGH40N60SFDTU

FGH40N60SFDTU

N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (acco...
FGH40N60SFDTU
N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Marking on the case: FGH40N60SFD. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH40N60SFDTU
N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Marking on the case: FGH40N60SFD. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
7.84£ VAT incl.
(6.53£ excl. VAT)
7.84£
Quantity in stock : 4
FGH40N60SMDF

FGH40N60SMDF

N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (acco...
FGH40N60SMDF
N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 1880pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 70 ns. Collector current: 80A. Ic(pulse): 60.4k Ohms. Pd (Power Dissipation, Max): 349W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 12 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Spec info: Ic 80A @ 25°C, 40A @ 110°C, Icm 120A (pulsed). CE diode: yes. Germanium diode: no
FGH40N60SMDF
N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 1880pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 70 ns. Collector current: 80A. Ic(pulse): 60.4k Ohms. Pd (Power Dissipation, Max): 349W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 12 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Spec info: Ic 80A @ 25°C, 40A @ 110°C, Icm 120A (pulsed). CE diode: yes. Germanium diode: no
Set of 1
12.14£ VAT incl.
(10.12£ excl. VAT)
12.14£
Quantity in stock : 65
FGH40N60UFD

FGH40N60UFD

N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (acco...
FGH40N60UFD
N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH40N60UFD
N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
7.54£ VAT incl.
(6.28£ excl. VAT)
7.54£
Quantity in stock : 10
FGH60N60SFD

FGH60N60SFD

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (acco...
FGH60N60SFD
N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 47 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SFD. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH60N60SFD
N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 47 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SFD. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
12.30£ VAT incl.
(10.25£ excl. VAT)
12.30£
Quantity in stock : 71
FGH60N60SFTU

FGH60N60SFTU

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (acco...
FGH60N60SFTU
N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SF. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: no. Germanium diode: no
FGH60N60SFTU
N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SF. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: no. Germanium diode: no
Set of 1
11.80£ VAT incl.
(9.83£ excl. VAT)
11.80£
Quantity in stock : 43
FGH60N60SMD

FGH60N60SMD

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (acco...
FGH60N60SMD
N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2915pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 30 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SMD. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 18 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH60N60SMD
N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2915pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 30 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SMD. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 18 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
9.65£ VAT incl.
(8.04£ excl. VAT)
9.65£
Out of stock
FP25R12W2T4

FP25R12W2T4

N-channel transistor, 25A, Other, Other, 1200V. Ic(T=100°C): 25A. Housing: Other. Housing (accordin...
FP25R12W2T4
N-channel transistor, 25A, Other, Other, 1200V. Ic(T=100°C): 25A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 1.45pF. Channel type: N. Collector current: 39A. Ic(pulse): 50A. Dimensions: 56.7x48x12mm. Pd (Power Dissipation, Max): 175W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: ICRM--50A Tp=1mS, Tc=25°C. Number of terminals: 33dB. Note: 7x IGBT+ CE Diode. CE diode: yes. Germanium diode: no
FP25R12W2T4
N-channel transistor, 25A, Other, Other, 1200V. Ic(T=100°C): 25A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 1.45pF. Channel type: N. Collector current: 39A. Ic(pulse): 50A. Dimensions: 56.7x48x12mm. Pd (Power Dissipation, Max): 175W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: ICRM--50A Tp=1mS, Tc=25°C. Number of terminals: 33dB. Note: 7x IGBT+ CE Diode. CE diode: yes. Germanium diode: no
Set of 1
70.18£ VAT incl.
(58.48£ excl. VAT)
70.18£
Quantity in stock : 3
FQA10N80C

FQA10N80C

N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C):...
FQA10N80C
N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.93 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
FQA10N80C
N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.93 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
Set of 1
5.16£ VAT incl.
(4.30£ excl. VAT)
5.16£
Quantity in stock : 19
FQA11N90C

FQA11N90C

N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Dra...
FQA11N90C
N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FQA11N90C
N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
9.42£ VAT incl.
(7.85£ excl. VAT)
9.42£
Quantity in stock : 21
FQA11N90C_F109

FQA11N90C_F109

N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Dra...
FQA11N90C_F109
N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C_F109. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FQA11N90C_F109
N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C_F109. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
9.42£ VAT incl.
(7.85£ excl. VAT)
9.42£
Quantity in stock : 60
FQA11N90_F109

FQA11N90_F109

N-channel transistor, PCB soldering, TO-3PN, 900V, 11.4A. Housing: PCB soldering. Housing: TO-3PN. D...
FQA11N90_F109
N-channel transistor, PCB soldering, TO-3PN, 900V, 11.4A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA 11N90. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.96 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 340 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FQA11N90_F109
N-channel transistor, PCB soldering, TO-3PN, 900V, 11.4A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA 11N90. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.96 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 340 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
6.65£ VAT incl.
(5.54£ excl. VAT)
6.65£
Quantity in stock : 22
FQA13N50CF

FQA13N50CF

N-channel transistor, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C...
FQA13N50CF
N-channel transistor, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 9.5A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.43 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 60A. IDss (min): 1uA. Pd (Power Dissipation, Max): 218W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 43nC). G-S Protection: no
FQA13N50CF
N-channel transistor, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 9.5A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.43 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 60A. IDss (min): 1uA. Pd (Power Dissipation, Max): 218W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 43nC). G-S Protection: no
Set of 1
4.98£ VAT incl.
(4.15£ excl. VAT)
4.98£
Quantity in stock : 71
FQA13N80-F109

FQA13N80-F109

N-channel transistor, PCB soldering, TO-3PN, 800V, 12.6A, TO-3PN ( 2-16C1B ), TO-3PN, 800V, 1. Housi...
FQA13N80-F109
N-channel transistor, PCB soldering, TO-3PN, 800V, 12.6A, TO-3PN ( 2-16C1B ), TO-3PN, 800V, 1. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FQA13N80-F109
N-channel transistor, PCB soldering, TO-3PN, 800V, 12.6A, TO-3PN ( 2-16C1B ), TO-3PN, 800V, 1. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
8.80£ VAT incl.
(7.33£ excl. VAT)
8.80£
Out of stock
FQA19N60

FQA19N60

N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C)...
FQA19N60
N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 11.7A. ID (T=25°C): 18.5A. Idss (max): 100uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 2800pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 74A. IDss (min): 10uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 65 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
FQA19N60
N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 11.7A. ID (T=25°C): 18.5A. Idss (max): 100uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 2800pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 74A. IDss (min): 10uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 65 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no
Set of 1
6.65£ VAT incl.
(5.54£ excl. VAT)
6.65£
Quantity in stock : 41
FQA24N50

FQA24N50

N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C):...
FQA24N50
N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C): 12.5A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.156 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 500V. C(in): 3500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 96A. IDss (min): 1uA. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 80 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no
FQA24N50
N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C): 12.5A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.156 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 500V. C(in): 3500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 96A. IDss (min): 1uA. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 80 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no
Set of 1
9.56£ VAT incl.
(7.97£ excl. VAT)
9.56£
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