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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2A, 3A, 3A, 1.8 Ohms, 400V - BUZ76

N-channel transistor, 2A, 3A, 3A, 1.8 Ohms, 400V - BUZ76
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 2 2.83£ 3.40£
Quantity U.P
1 - 2 2.83£ 3.40£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2
Set of 1

N-channel transistor, 2A, 3A, 3A, 1.8 Ohms, 400V - BUZ76. N-channel transistor, 2A, 3A, 3A, 1.8 Ohms, 400V. ID (T=100°C): 2A. ID (T=25°C): 3A. Idss (max): 3A. On-resistance Rds On: 1.8 Ohms. Voltage Vds(max): 400V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS. Note: <57/115ns. Quantity per case: 1. Quantity in stock updated on 21/04/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 41
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IRF830
N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF830
N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
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(1.07£ excl. VAT)
1.28£

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