N-channel FETs and MOSFETs

N-channel transistor, Other, Other, 600V. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. Channel type: N. Collector current: 30A. Dimensions: 107.5x45x17mm. Pd (Power Dissipation, Max): 700W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 250 ns. Td(on): 50 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 24. Spec info: 7x IGBT. CE diode: yes. Germanium diode: no

N-channel transistor, 0.1A, 0.1A, 15 Ohms, 50V. ID (T=25°C): 0.1A. Idss (max): 0.1A. On-resistance Rds On: 15 Ohms. Voltage Vds(max): 50V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: 5ns...20ns. Pd (Power Dissipation, Max): 0.3W. Technology: D-MOS Log.L

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 50V, 0.173A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.173A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSN20. Drain current through resistor Rds [Ohm] @ Ids [A]: 15 Ohms @ 0.1A. Gate breakdown voltage Ugs [V]: 3.5V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 25pF. Maximum dissipation Ptot [W]: 0.83W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Housing: SOT23

N-channel transistor, 4.4A, 6A, 100nA, 0.8 Ohms, SOT-223 ( TO-226 ), SOT-223, 30 v. ID (T=100°C): 4.4A. ID (T=25°C): 6A. Idss (max): 100nA. On-resistance Rds On: 0.8 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 30 v. C(in): 250pF. Cost): 88pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. IDss (min): 10nA. Number of terminals: 4. Pd (Power Dissipation, Max): 8.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 6 ns. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.8V. Vgs(th) min.: 1V. Technology: Enhancement mode, TrenchMOS transistor. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SOT-223, 600V, 0.12A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 0.12A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP125. Drain current through resistor Rds [Ohm] @ Ids [A]: 45 Ohms @ 0.12A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 130pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 600V, 0.1A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 0.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP135. Drain current through resistor Rds [Ohm] @ Ids [A]: 60 Ohms @ 0.01A. Gate breakdown voltage Ugs [V]: 2.1V. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 146pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 60V, 1.8A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 1.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP295. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.3 Ohms @ 1.8A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 368pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 200V, 0.6A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.6A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP297. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 0.65A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 160 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-223, 240V, 0.35A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: 240V. Drain Current Id [A] @ 25°C: 0.35A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP89. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.35A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 150mA. Idss (max): 100uA. On-resistance Rds On: 3.5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 23pF. Cost): 6pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Id(imp): 600mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123LT1G, BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: N-channel TrenchMOS transistor Logic level FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SOT-23, 100V, 0.19A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 0.19A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 'SAs'. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ 0.15A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 3.5 ns. Switch-off delay tf[nsec.]: 11 ns. Ciss Gate Capacitance [pF]: 20.9pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 100V, 0.17A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 0.17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SA. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.17A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 40pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. On-resistance Rds On: 6 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 20pF. Cost): 9pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Id(imp): 680mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.6V. Vgs(th) min.: 1.6V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 100V, 0.17A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 0.17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SA. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 100mA. Gate breakdown voltage Ugs [V]: 2.6V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 20pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 600V, 0.021A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 0.021A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SHS. Drain current through resistor Rds [Ohm] @ Ids [A]: 500 Ohms @ 0.016A. Gate breakdown voltage Ugs [V]: -2.7V. Switch-on time ton [nsec.]: 9.2 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 28pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 240V, 0.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 240V. Drain Current Id [A] @ 25°C: 0.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SRs. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ 0.1A. Gate breakdown voltage Ugs [V]: 1.8V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 77pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.22A, 100uA, 0.7 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 0.22A. Idss (max): 100uA. On-resistance Rds On: 0.7 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 27pF. Cost): 13pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.88A. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 2.5 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.8V. Spec info: Logic Level Enhancement Mode. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.2A, 1.4 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 0.2A. On-resistance Rds On: 1.4 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 50pF. Cost): 25pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 1A. IDss (min): 0.5uA. Note: screen printing/SMD code SS. Marking on the case: SS. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Weight: 0.008g. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 20 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.5V. Spec info: Logic Level Enhancement Mode. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SOT-23, 50V, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 200mA. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: SS. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.22A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 36ns. Ciss Gate Capacitance [pF]: 27pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 50V, 0.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J1. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 100mA. Gate breakdown voltage Ugs [V]: 1.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 250V, 0.03A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 0.03A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: STs. Drain current through resistor Rds [Ohm] @ Ids [A]: 30 Ohms @ 15mA. Gate breakdown voltage Ugs [V]: 1.4V. Switch-on time ton [nsec.]: 8.7 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 76pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 55V, 0.54A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 0.54A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.43 Ohm @ 0.27A. Gate breakdown voltage Ugs [V]: 1.6V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 31 ns. Ciss Gate Capacitance [pF]: 75pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.25A, 1000uA, 5 Ohms, TO-92, TO-92, 240V. ID (T=25°C): 0.25A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 240V. C(in): 80pF. Cost): 15pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 1A. IDss (min): 100uA. Marking on the case: SS88. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 5 ns. Technology: 'Enhancement mode'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.6V. Drain-source protection : no. G-S Protection: no

N-channel transistor, 0.19A, 1uA, 5 Ohms, TO-92, SOT54, 100V. ID (T=25°C): 0.19A. Idss (max): 1uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): SOT54. Voltage Vds(max): 100V. C(in): 25pF. Cost): 8.5pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 0.8A. IDss (min): 0.01uA. Temperature: +150°C. Pd (Power Dissipation, Max): 0.83W. Td(off): 12 ns. Td(on): 3 ns. Technology: Enhancement mode, TrenchMOS™ technology.. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Very fast switching, Logic level compatible. Drain-source protection : yes. G-S Protection: no