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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - CEB6030L

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - CEB6030L
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Quantity excl. VAT VAT incl.
1 - 4 0.81£ 0.97£
5 - 9 0.77£ 0.92£
10 - 24 0.73£ 0.88£
25 - 49 0.69£ 0.83£
50 - 99 0.67£ 0.80£
100 - 249 0.66£ 0.79£
250 - 718 0.62£ 0.74£
Quantity U.P
1 - 4 0.81£ 0.97£
5 - 9 0.77£ 0.92£
10 - 24 0.73£ 0.88£
25 - 49 0.69£ 0.83£
50 - 99 0.67£ 0.80£
100 - 249 0.66£ 0.79£
250 - 718 0.62£ 0.74£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 718
Set of 1

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - CEB6030L. N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Quantity in stock updated on 21/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 65
NDB6030L

NDB6030L

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): ...
NDB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Quantity per case: 1
NDB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Quantity per case: 1
Set of 1
1.57£ VAT incl.
(1.31£ excl. VAT)
1.57£
Quantity in stock : 285
SPB56N03L

SPB56N03L

N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v. ID (T=25°C): 56A. Idss (m...
SPB56N03L
N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v. ID (T=25°C): 56A. Idss (max): 56A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Quantity per case: 1
SPB56N03L
N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v. ID (T=25°C): 56A. Idss (max): 56A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Quantity per case: 1
Set of 1
1.12£ VAT incl.
(0.93£ excl. VAT)
1.12£

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Quantity in stock : 2
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