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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 250uA, 0.23 Ohms, TO-220, TO-220AB, 100V - BUZ72A

N-channel transistor, 7A, 11A, 250uA, 0.23 Ohms, TO-220, TO-220AB, 100V - BUZ72A
Quantity excl. VAT VAT incl.
1 - 4 1.47£ 1.76£
5 - 9 1.39£ 1.67£
10 - 24 1.32£ 1.58£
25 - 49 1.25£ 1.50£
50 - 99 1.22£ 1.46£
100 - 249 1.19£ 1.43£
250+ 1.13£ 1.36£
Quantity U.P
1 - 4 1.47£ 1.76£
5 - 9 1.39£ 1.67£
10 - 24 1.32£ 1.58£
25 - 49 1.25£ 1.50£
50 - 99 1.22£ 1.46£
100 - 249 1.19£ 1.43£
250+ 1.13£ 1.36£
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 11A, 250uA, 0.23 Ohms, TO-220, TO-220AB, 100V - BUZ72A. N-channel transistor, 7A, 11A, 250uA, 0.23 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.23 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 330pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 44A. Temperature: +175°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 10 ns. Technology: Enhancement Mode Power MOSFET Transistor. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 21/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 55
FQP13N10

FQP13N10

N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ...
FQP13N10
N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. On-resistance Rds On: 0.142 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Id(imp): 51.2A. IDss (min): 1uA. Pd (Power Dissipation, Max): 65W. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. Drain-source protection : yes. G-S Protection: no
FQP13N10
N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. On-resistance Rds On: 0.142 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Id(imp): 51.2A. IDss (min): 1uA. Pd (Power Dissipation, Max): 65W. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. Drain-source protection : yes. G-S Protection: no
Set of 1
2.18£ VAT incl.
(1.82£ excl. VAT)
2.18£

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STP80NF70

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STP80NF06

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WPT-25GRAM

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Operating temperature: -50...+180°C. Note: thermally conductive silicone grease. Note: syringe. Not...
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2SC2166

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STD10P6F6

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FRN01WK0101A10

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