Standard and Rectifier Diodes

Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon

Forward current (AV): 0.25A. IFSM: 15A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 2.7x5.2mm ). VRRM: 4000V. Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: 'High Voltage Glass Passivated Junction Rectifier'. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. Spec info: IFSM--15App/8.3mS

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. MRI (max): 100uA. MRI (min): 5uA. Equivalents: HER103G. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Number of terminals: 2

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 400V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER105G. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER108G. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Number of terminals: 2

Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). VRRM: 200V. Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 150uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Number of terminals: 2. Note: high efficiency rectifier diode. Spec info: Ifsm 150Ap T=8.3ms

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 300V. Cj: 80pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms

Forward current (AV): 3A. IFSM: 150A. Housing: DO-27. Housing (according to data sheet): DO-27 (9.5x5.6mm). VRRM: 400V. Cj: 70pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 150uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Weight: 0.4g. Spec info: Ifsm 150Ap T=8.3ms

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 1000V. Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms

Forward current (AV): 6A. IFSM: 150A. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). VRRM: 1000V. Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. Spec info: 150Ap/8.3ms

Forward current (AV): 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). VRRM: 600V. Semiconductor material: silicon. Pd (Power Dissipation, Max): 14W. Assembly/installation: surface-mounted component (SMD). Note: Ultrafast. Note: Ifsm--60Aps

Forward current (AV): 8A. IFSM: 60A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 10pF. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 18 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Marking on the case: HFA08TB60. Equivalents: 39.2k Ohms. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.4V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. Spec info: IFRM 24A

Forward current (AV): 8A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). VRRM: 600V. Semiconductor material: silicon. Pd (Power Dissipation, Max): 36W. Assembly/installation: surface-mounted component (SMD). Note: Ultrafast. Note: Ifsm 60Aps

Forward current (AV): 15A. IFSM: 50A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 25pF. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 42 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 400uA. MRI (min): 1uA. Marking on the case: HFA15TB60. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. Spec info: Trr 19ns, (IF=1A)

Forward current (AV): 25A. IFSM: 225A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 55pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 600uA. MRI (min): 1.5uA. Equivalents: VS-HFA25TB60-M3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--225Ap

Forward current (AV): 30A. IFSM: 150A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: 25pF. Conditioning: plastic tube. Dielectric structure: common cathode. Trr Diode (Min.): 19 ns. Semiconductor material: silicon. Function: Ultra Fast Soft Recovery Diode. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V. Quantity per case: 2. Number of terminals: 3. Conditioning unit: 25. Spec info: Ifsm 150Ap, t=8.33ms

Forward current (AV): 6A. VRRM: 800V. Quantity per case: 1. Semiconductor material: silicon. Note: D30. Assembly/installation: PCB through-hole mounting. Note: M4 thread

RoHS: yes. Component family: Small-signal diode. Surface mount (SMD). Housing: PCB soldering (SMD). Housing: SOD80C (MiniMELF). Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.15A. Ifsm [A]: 2A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 25nA..50uA. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +200°C. Forward voltage Vfmax (V): 1V @ 10mA. Housing (JEDEC standard): 0.5W

Forward current (AV): 0.2A. IFSM: 2A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.4x1.6mm ). VRRM: 100V. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High Speed ​​Switching Rectifiers. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.62V. Spec info: IFSM--2Ap (tp=1us)

Forward current (AV): 1A. VRRM: 600V. Semiconductor material: silicon. Note: SAMSUNG

Forward current (AV): 0.1A. VRRM: 80V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode

Housing: SOD123. VRRM: 30V. Average Rectified Current per Diode: 0.5A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): 0.43V / 0.5A. Mounting Type: SMD. Reverse Leakage Current: 130uA / 30V. Product series: MBRB. MSL: 1

Forward current (AV): 10A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220A-2P. VRRM: 100V. RoHS: yes. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 0.1mA. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.71V

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 100V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V. Function: Dual Schottky Barrier Rectifier Diode. Spec info: Ifsm 120A (t=8.3ms)

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 150V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V. Function: Dual Schottky Barrier Rectifier Diode. Spec info: Ifsm 120A (t=8.3ms)