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Semiconductors Diodes Standard and Rectifier Diodes

GI824

GI824
Quantity excl. VAT VAT incl.
1 - 4 3.74£ 4.49£
5 - 9 3.09£ 3.71£
10 - 24 2.93£ 3.52£
25 - 37 2.76£ 3.31£
Quantity U.P
1 - 4 3.74£ 4.49£
5 - 9 3.09£ 3.71£
10 - 24 2.93£ 3.52£
25 - 37 2.76£ 3.31£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 37
Set of 1

GI824. Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon. Quantity in stock updated on 21/04/2025, 05:25.

Equivalent products :

Quantity in stock : 4155
BY500-800

BY500-800

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
Set of 1
0.25£ VAT incl.
(0.21£ excl. VAT)
0.25£

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Quantity in stock : 19
BC560B

BC560B

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according...
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IRF1404Z

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N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 130A. ID (...
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2N6027

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Unijunction transistor. Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Numbe...
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ELC470UF200P-105-25X30-H

ELC470UF200P-105-25X30-H

DC voltage: 200V. Capacitance: 470uF. Diameter: 25mm. Lifespan: 2000 hours. Lenght: 30mm. Configurat...
ELC470UF200P-105-25X30-H
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KBU8M

KBU8M

VRRM: 1000V. Forward current (AV): 8A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
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BY500-1000

BY500-1000

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
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MUR880

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Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
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PRW-10W-10K

PRW-10W-10K

Resistance: 10k Ohms. Power: 10W. Resistor type: electric wire winding. Temperature stability: 350pp...
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0.82£

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