Standard and Rectifier Diodes

Forward current (AV): 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm--60Aps. Pd (Power Dissipation, Max): 14W. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 8A. IFSM: 60A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 10pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 18 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Marking on the case: HFA08TB60. Equivalents: 39.2k Ohms. Number of terminals: 2. Pd (Power Dissipation, Max): 36W. RoHS: yes. Spec info: IFRM 24A. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.4V

Forward current (AV): 8A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm 60Aps. Pd (Power Dissipation, Max): 36W. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 15A. IFSM: 50A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 25pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 42 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 400uA. MRI (min): 1uA. Marking on the case: HFA15TB60. Number of terminals: 2. RoHS: yes. Spec info: Trr 19ns, (IF=1A). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V

Forward current (AV): 25A. IFSM: 225A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 600uA. MRI (min): 1.5uA. Equivalents: VS-HFA25TB60-M3. Number of terminals: 2. RoHS: yes. Spec info: IFSM--225Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V

Forward current (AV): 30A. IFSM: 150A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: 25pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 19 ns. Semiconductor material: silicon. Function: Ultra Fast Soft Recovery Diode. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 150Ap, t=8.33ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V

Forward current (AV): 6A. VRRM: 800V. Quantity per case: 1. Semiconductor material: silicon. Note: D30. Note: M4 thread. Assembly/installation: PCB through-hole mounting

Housing: DO214AC (SMA). VRRM: 40V. Average Rectified Current per Diode: 3A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.51V / 3A. Mounting Type: SMD. Reverse Leakage Current: 50uA / 40V. Information: 3rd Gen. Series: L217

Forward current (AV): 0.2A. IFSM: 2A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.4x1.6mm ). VRRM: 100V. Semiconductor material: silicon. Number of terminals: 2. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+175°C

Forward current (AV): 0.2A. IFSM: 2A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.4x1.6mm ). VRRM: 100V. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High Speed ​​Switching Rectifiers. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: IFSM--2Ap (tp=1us). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.62V

Housing: miniMELF. VRRM: 75V. Average Rectified Current per Diode: 0.2A. Diode type: Switching. Diode Configuration: independent. Forward Voltage (Max): 1V / 100mA. Mounting Type: SMD. Reverse Leakage Current: 5uA / 75V. Reverse Recovery Time (Max): 4ns. Series: LL4448

Forward current (AV): 1A. VRRM: 600V. Semiconductor material: silicon. Note: SAMSUNG

Forward current (AV): 0.1A. VRRM: 80V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode

Housing: SOD123. VRRM: 30V. Average Rectified Current per Diode: 0.5A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): 0.43V / 0.5A. Mounting Type: SMD. Reverse Leakage Current: 130uA / 30V. Series: MBRB

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 100V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 150V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V

Forward current (AV): 10A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2P. VRRM: 200V. Semiconductor material: Sb. Note: Schottky rectifier diode. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.2mA. MRI (min): 0.2mA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.99V. Forward voltage Vf (min): 0.87V

Forward current (AV): 10A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V. Semiconductor material: Sb. Note: B1045. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 60V. Forward current (AV): 10A. IFSM: 150A. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.7V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 6mA. MRI (min): 0.1mA. Marking on the case: B1060. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting

Forward current (AV): 7.5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 60V. Double: Double. Semiconductor material: Sb. Note: diode for switching power supply. Note: 15A/150App. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V. Cj: 500pF. Semiconductor material: Sb. Function: 'Barrier Rectifiers'. Equivalents: MBR1645G. Number of terminals: 2. Schottky diode?: schottky. Spec info: Ifsm 150App / 8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.63V

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V. Cj: 500pF. Semiconductor material: Sb. Function: 'Barrier Rectifiers'. Number of terminals: 3. Schottky diode?: schottky. Spec info: Ifsm 150App/8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.63V. Forward voltage Vf (min): 0.57V

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 60V. Cj: 500pF. Semiconductor material: Sb. Note: 'Barrier Rectifiers'. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.65V. Spec info: Ifsm 150App/8.3ms

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 60V. Cj: 400pF. Semiconductor material: Sb. Function: 'Barrier Rectifiers'. Number of terminals: 3. Schottky diode?: schottky. Spec info: Ifsm 150App/8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.65V