Standard and Rectifier Diodes

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC / DO214AB. VRRM: 600V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tr: 75 ns. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.7V

Forward current (AV): 0.5A. VRRM: 800V. Semiconductor material: silicon

VRRM: 400V. Semiconductor material: silicon. Note: SAMSUNG. Note: B29-04.79

Forward current (AV): 5A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S

Forward current (AV): 3A. VRRM: 1500V. Semiconductor material: silicon. Note: 9x7mm. Note: MONITOR DAMP. Note: D09.15

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 200V. Semiconductor material: silicon. Note: 30App/8.3ms, ES1D SMD marking. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Note: Super Fast Surface Mount Rectifier Diode

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 400V. Semiconductor material: silicon. Note: 30App/8.3ms, ES1G SMD marking. Number of terminals: 2. Note: Super Fast Surface Mount Rectifier Diode

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 600V. Semiconductor material: silicon. Note: 30App/8.3ms, ES1J SMD marking. Number of terminals: 2. Note: Super Fast Surface Mount Rectifier Diode

Forward current (AV): 30A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Double: Double. Semiconductor material: Sb. Note: Schottky diode. Note: Ifsm--250A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Note: dual silicon diode

Forward current (AV): 5A. IFSM: 80A. Housing (according to data sheet): TO-3FP. VRRM: 1500V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 0.15us. Semiconductor material: silicon. Function: Low Loss Super High Speed ​​Rectifier. Note: DAMPER +MODULATION. Marking on the case: CO23M-15 (C023M-15). Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 1.8V. Spec info: IFSM--50/80Ap, t=10mS

Forward current (AV): 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 200V. Double: Double. Semiconductor material: silicon. Note: ULTRA FAST ->l<-. Note: Ifsm--50A/10mS. Assembly/installation: PCB through-hole mounting

Forward current (AV): 0.8A. VRRM: 600V. Semiconductor material: silicon. Note: GI, S

Forward current (AV): 6A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 200V. Cj: 55pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Dual Fast Recovery Diode. Note: common cathode. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifsm 100A (t=10ms)

Forward current (AV): 1A. Housing (according to data sheet): TS-1 ( 2.5x3.3mm ). VRRM: 400V. Semiconductor material: silicon. Note: 30Ap/8.3ms

Forward current (AV): 1A. VRRM: 200V. Semiconductor material: silicon. Note: GL

Forward current (AV): 3A. VRRM: 100V. Semiconductor material: silicon. Note: GL. Note: 125A/8.3ms

Forward current (AV): 3A. VRRM: 150V. Semiconductor material: silicon. Note: GL. Note: 125A/8.3ms

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Double: Double. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Number of terminals: 3. Note: common cathode. Note: Dual Ultrafast Plastic Rectifier. Note: Ifsm 125Aps/8.3ms

Forward current (AV): 15A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 200V. Cj: 175pF. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Double ultra-fast rectifier diode. common cathode. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm--300Ap, t=8.3ms

Forward current (AV): 15A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: 145pF. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Double ultra-fast rectifier diode. common cathode. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm--300Ap, t=8.3ms

Forward current (AV): 5A. VRRM: 1200V. Semiconductor material: silicon. Note: High Speed ​​Switching. Note: Ifsm--30App. Note: high voltage and high reliability

Forward current (AV): 6A. IFSM: 60A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. VRRM: 200V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35ms. Semiconductor material: silicon. Function: Ultrafast with soft recovery. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1V. Number of terminals: 2. Quantity per case: 1. Spec info: Low forward voltage

Forward current (AV): 10A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. VRRM: 200V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 32 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 100uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Spec info: Ultrafast with soft recovery (IF=1A), <35ns

Forward current (AV): 10A. IFSM: 50A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. VRRM: 600V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 34 ns. Semiconductor material: silicon. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 2.2V. Forward voltage Vf (min): 2V. Number of terminals: 2. Quantity per case: 1. Spec info: Ultrafast with soft recovery (IF=1A), <40ns

Forward current (AV): 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 90 ns. Semiconductor material: silicon. Function: 'Damper + Modulation Diode'. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Quantity per case: 2. Number of terminals: 3. Note: Dd--Vf--1.4...1.6V, Dm--Vf--2.0...2.2V. Note: Dd--Trr--120ns, Dm--Trr--90ns. Spec info: Dd--1500V/6A/60Ap, Dm--600V/20A/120Ap