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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

531 products available
Products per page :
Quantity in stock : 515
FR1J

FR1J

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC...
FR1J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR1J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 10
1.46£ VAT incl.
(1.22£ excl. VAT)
1.46£
Quantity in stock : 352
FR1M

FR1M

Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Semiconductor mat...
FR1M
Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: 30App/10ms
FR1M
Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: 30App/10ms
Set of 10
0.91£ VAT incl.
(0.76£ excl. VAT)
0.91£
Quantity in stock : 2299
FR207

FR207

Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x...
FR207
Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 1000V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--60Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
FR207
Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 1000V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--60Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
Set of 1
0.23£ VAT incl.
(0.19£ excl. VAT)
0.23£
Quantity in stock : 941
FR2J

FR2J

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA...
FR2J
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR2J
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 5
0.78£ VAT incl.
(0.65£ excl. VAT)
0.78£
Quantity in stock : 4033
FR2M

FR2M

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA...
FR2M
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR2M
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.20£ VAT incl.
(0.17£ excl. VAT)
0.20£
Quantity in stock : 90
FR305

FR305

Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM...
FR305
Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM: 600V. Semiconductor material: silicon. Note: FAST RECOVERY RECTIFIER. Note: IFSM--200Ap/8.3mS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
FR305
Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM: 600V. Semiconductor material: silicon. Note: FAST RECOVERY RECTIFIER. Note: IFSM--200Ap/8.3mS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
0.41£ VAT incl.
(0.34£ excl. VAT)
0.41£
Quantity in stock : 38
FR3D

FR3D

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (...
FR3D
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Note: 100App/10ms. Number of terminals: 2. Operating temperature: -50...+150°C
FR3D
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Note: 100App/10ms. Number of terminals: 2. Operating temperature: -50...+150°C
Set of 1
0.41£ VAT incl.
(0.34£ excl. VAT)
0.41£
Quantity in stock : 470
FR3J

FR3J

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (...
FR3J
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 600V. Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: Ifsm 100App / 8.3ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR3J
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 600V. Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: Ifsm 100App / 8.3ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.31£ VAT incl.
(0.26£ excl. VAT)
0.31£
Quantity in stock : 653
FR3M

FR3M

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC DO214A...
FR3M
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC DO214AB. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR3M
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC DO214AB. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.29£ VAT incl.
(0.24£ excl. VAT)
0.29£
Quantity in stock : 2609
FR607

FR607

Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
FR607
Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). VRRM: 1000V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
FR607
Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). VRRM: 1000V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
Set of 1
0.38£ VAT incl.
(0.32£ excl. VAT)
0.38£
Quantity in stock : 127
FUF5406

FUF5406

Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
FUF5406
Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Rectifier. Number of terminals: 2. Spec info: Ifms 150Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
FUF5406
Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Rectifier. Number of terminals: 2. Spec info: Ifms 150Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
Set of 1
0.22£ VAT incl.
(0.18£ excl. VAT)
0.22£
Quantity in stock : 37
GI824

GI824

Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon...
GI824
Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon
GI824
Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon
Set of 1
4.49£ VAT incl.
(3.74£ excl. VAT)
4.49£
Quantity in stock : 3860
GL1M

GL1M

VRRM: 1000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configurati...
GL1M
VRRM: 1000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.2V / 1A. Mounting Type: SMD. Reverse Leakage Current: 5uA / 1000V. Reverse Recovery Time (Max): 1500ns. Series: GL1
GL1M
VRRM: 1000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.2V / 1A. Mounting Type: SMD. Reverse Leakage Current: 5uA / 1000V. Reverse Recovery Time (Max): 1500ns. Series: GL1
Set of 10
1.21£ VAT incl.
(1.01£ excl. VAT)
1.21£
Quantity in stock : 4932
GP02-40

GP02-40

Forward current (AV): 0.25A. IFSM: 15A. Housing: DO-41. Housing (according to data sheet): DO-41 ( D...
GP02-40
Forward current (AV): 0.25A. IFSM: 15A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 2.7x5.2mm ). VRRM: 4000V. Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: 'High Voltage Glass Passivated Junction Rectifier'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--15App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
GP02-40
Forward current (AV): 0.25A. IFSM: 15A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 2.7x5.2mm ). VRRM: 4000V. Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: 'High Voltage Glass Passivated Junction Rectifier'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--15App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
Set of 1
0.35£ VAT incl.
(0.29£ excl. VAT)
0.35£
Quantity in stock : 41
HER103

HER103

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM:...
HER103
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. MRI (max): 100uA. MRI (min): 5uA. Equivalents: HER103G. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
HER103
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. MRI (max): 100uA. MRI (min): 5uA. Equivalents: HER103G. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 10
1.48£ VAT incl.
(1.23£ excl. VAT)
1.48£
Quantity in stock : 510
HER105

HER105

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-2...
HER105
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 400V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER105G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
HER105
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 400V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER105G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 10
1.45£ VAT incl.
(1.21£ excl. VAT)
1.45£
Quantity in stock : 1718
HER108

HER108

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-2...
HER108
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER108G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
HER108
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER108G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
Set of 10
1.28£ VAT incl.
(1.07£ excl. VAT)
1.28£
Quantity in stock : 580
HER303

HER303

Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 ...
HER303
Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). VRRM: 200V. Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
HER303
Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). VRRM: 200V. Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.24£ VAT incl.
(0.20£ excl. VAT)
0.24£
Quantity in stock : 22
HER304

HER304

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
HER304
Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 300V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
HER304
Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 300V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.28£ VAT incl.
(0.23£ excl. VAT)
0.28£
Quantity in stock : 585
HER305

HER305

Forward current (AV): 3A. IFSM: 150A. Housing: DO-27. Housing (according to data sheet): DO-27 (9.5x...
HER305
Forward current (AV): 3A. IFSM: 150A. Housing: DO-27. Housing (according to data sheet): DO-27 (9.5x5.6mm). VRRM: 400V. Cj: 70pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Weight: 0.4g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
HER305
Forward current (AV): 3A. IFSM: 150A. Housing: DO-27. Housing (according to data sheet): DO-27 (9.5x5.6mm). VRRM: 400V. Cj: 70pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Weight: 0.4g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.28£ VAT incl.
(0.23£ excl. VAT)
0.28£
Quantity in stock : 405
HER308

HER308

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
HER308
Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 1000V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
HER308
Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 1000V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.28£ VAT incl.
(0.23£ excl. VAT)
0.28£
Quantity in stock : 94
HER608

HER608

Forward current (AV): 6A. IFSM: 150A. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm)...
HER608
Forward current (AV): 6A. IFSM: 150A. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). VRRM: 1000V. Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Spec info: 150Ap/8.3ms. Assembly/installation: PCB through-hole mounting. Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V
HER608
Forward current (AV): 6A. IFSM: 150A. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). VRRM: 1000V. Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Spec info: 150Ap/8.3ms. Assembly/installation: PCB through-hole mounting. Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V
Set of 1
0.58£ VAT incl.
(0.48£ excl. VAT)
0.58£
Quantity in stock : 33
HFA08SD60S

HFA08SD60S

Forward current (AV): 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( D...
HFA08SD60S
Forward current (AV): 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm--60Aps. Pd (Power Dissipation, Max): 14W. Assembly/installation: surface-mounted component (SMD)
HFA08SD60S
Forward current (AV): 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm--60Aps. Pd (Power Dissipation, Max): 14W. Assembly/installation: surface-mounted component (SMD)
Set of 1
1.55£ VAT incl.
(1.29£ excl. VAT)
1.55£
Quantity in stock : 44
HFA08TB60

HFA08TB60

Forward current (AV): 8A. IFSM: 60A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2....
HFA08TB60
Forward current (AV): 8A. IFSM: 60A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 10pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 18 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Marking on the case: HFA08TB60. Equivalents: 39.2k Ohms. Number of terminals: 2. Pd (Power Dissipation, Max): 36W. RoHS: yes. Spec info: IFRM 24A. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.4V
HFA08TB60
Forward current (AV): 8A. IFSM: 60A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 600V. Cj: 10pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 18 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Marking on the case: HFA08TB60. Equivalents: 39.2k Ohms. Number of terminals: 2. Pd (Power Dissipation, Max): 36W. RoHS: yes. Spec info: IFRM 24A. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.4V
Set of 1
1.33£ VAT incl.
(1.11£ excl. VAT)
1.33£
Quantity in stock : 92
HFA08TB60S

HFA08TB60S

Forward current (AV): 8A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2P...
HFA08TB60S
Forward current (AV): 8A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm 60Aps. Pd (Power Dissipation, Max): 36W. Assembly/installation: surface-mounted component (SMD)
HFA08TB60S
Forward current (AV): 8A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). VRRM: 600V. Semiconductor material: silicon. Note: Ultrafast. Note: Ifsm 60Aps. Pd (Power Dissipation, Max): 36W. Assembly/installation: surface-mounted component (SMD)
Set of 1
2.52£ VAT incl.
(2.10£ excl. VAT)
2.52£

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