Standard and Rectifier Diodes

Forward current (AV): 75A. IFSM: 1200A. Housing: TO-240. Housing (according to data sheet): TO-240AA. VRRM: 1200V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: diode module. 'Fast Recovery Epitaxial Diode (FRED)'. Note: Ifsm--TVJ=45°C; t=10ms (50 Hz) 1200A. Note: dimensions 92x20.8x30mm. Note: 2 diode module. Number of terminals: 3. RoHS: yes. Spec info: insulation 3600V. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.58V. Forward voltage Vf (min): 1.8V

Forward current (AV): 880A. IFSM: n/a. VRRM: 400V. Pinout: M6 screws (x3). Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 220 ns. Semiconductor material: silicon. Function: mains diode Module, high current. Number of terminals: 3. Dimensions: 94x34x30mm. Pd (Power Dissipation, Max): 1100W. RoHS: yes. Spec info: Ifsm--Tvj=25°C, tP=10ms 13000A. Assembly/installation: PCB through-hole mounting. Electrical insulation: 3600V, 50/60Hz. Technology: dual common cathode diode (HiPerFREDTM). Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.1V

Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. VRRM: 100V. Cj: 4pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ifsm--2A t=1us, 1A t=1s. Note: CT--4pF (VR=0V, f=1.0MHz). Note: screen printing/SMD code D6. MRI (max): 5uA. MRI (min): 25nA. Marking on the case: D6. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1V

Forward current (AV): 5A. IFSM: 300A. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Note: diameter 8mm x 7.5mm. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V

Forward current (AV): 10A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Semiconductor material: silicon. Note: ScanSwitch. Note: IFSM 100Aps. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). VRRM: 1000V. Conditioning unit: 1000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Equivalents: MUR1100ERLG. Number of terminals: 2. RoHS: yes. Spec info: IFSM. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). VRRM: 200V. Quantity per case: 1. Semiconductor material: silicon. Function: rectifier diode for switching power supply. MRI (max): 5uA. MRI (min): 2uA. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C

Forward current (AV): 15A. IFSM: 110A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 110Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V

Forward current (AV): 15A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Semiconductor material: silicon. Function: Ultrafast. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C

Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.0x2.7mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: rectifier diode for switching power supply. Number of terminals: 2. RoHS: yes. Spec info: IFSM--35App. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.1V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR4100E. Equivalents: MUR4100ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V

Forward current (AV): 4A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. Marking on the case: MUR420. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 0.89V. Forward voltage Vf (min): 0.71V

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5mm ) CASE267–03. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 10uA. MRI (min): 5uA. Marking on the case: MUR460. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.28V. Forward voltage Vf (min): 1.05V

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( 9.5x5.3mm ) CASE267–05. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Switchmode Power Rectifiers. MRI (max): 900uA. MRI (min): 25uA. Marking on the case: MUR480E. Equivalents: MUR480ERLG. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.85V. Forward voltage Vf (min): 1.53V

Forward current (AV): 60A. IFSM: 550A. Housing: TO-247. Housing (according to data sheet): TO-247AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Note: Ultra Fast Recovery Diode. Marking on the case: MUR 6060. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U8100E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U820. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V

Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Housing: TO-220AC. Average Rectified Current per Diode: 8A. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.5V / 8A. Mounting Type: THT. Reverse Leakage Current: <500uA / 600V. Reverse Recovery Time (Max): 60ns. Information: MUR860. Series: MUR860. MSL: yes

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: U860. Number of terminals: 2. RoHS: yes. Spec info: ultra fast rectifier diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Function: power rectifier diode. For switching power supplies. Note: ultra-fast rectifier diode. Marking on the case: U880E. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.5V

Forward current (AV): 1A. IFSM: 40A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. RoHS: yes. Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1D. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V

Forward current (AV): 1A. IFSM: 35A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 600V. Diode Tff(25°C): 50 ns. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U1J. MRI (max): 150uA. MRI (min): 5uA. Marking on the case: U1J. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V