NPN bipolar transistors

NPN transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15035G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 5A, TO-220, TO-220AB, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 34. Minimum hFE gain: 12. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 400us. Tf(min): 70us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE18004G. Collector-emitter voltage Uceo [V]: 450V. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 6A, 450V. Collector current: 6A. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: SMPS. Pd (Power Dissipation, Max): 100W. Spec info: SWITCHMODE. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. BE diode: no. C(in): 1750pF. Cost): 100pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V

NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE210. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V

NPN transistor, PCB soldering, TO-225, 4mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4mA. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE243G. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 0.015W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 10A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V

NPN transistor, PCB soldering, SOT-32, 500mA. Housing: PCB soldering. Housing: SOT-32. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-126 ( TO-225 ), 500V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126 ( TO-225 ). Collector/emitter voltage Vceo: 500V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V

NPN transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V

NPN transistor, PCB soldering, TO-225, 500mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340G. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-220, TO-220AB, 800V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. BE diode: no. BE resistor: 100 Ohms (R1), 50 Ohms (R2). CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 400. Minimum hFE gain: 50. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(min): 2us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 2V

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1000pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE800G. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: no. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE803. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 1000V, 5A, TO-220-F. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Housing: TO-220-F. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 35W. Max frequency: 13MHz

NPN transistor, 8A, TO-220FP, TO-220F, 450V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 50. Cost): 156pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Vebo: 10V

NPN transistor, 15A, 650V. Collector current: 15A. Collector/emitter voltage Vceo: 650V. BE diode: no. Cost): 2.3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-264. Pd (Power Dissipation, Max): 170W. Spec info: TO-3PBL. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21193. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, 16A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) MJL21195. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL1302A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V