NPN bipolar transistors

NPN transistor, 0.03A, 35V. Collector current: 0.03A. Collector/emitter voltage Vceo: 35V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: FM-V/M/O/IF. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN. Spec info: 12149301860. BE diode: no. CE diode: no

NPN transistor, 0.03A, 35V. Collector current: 0.03A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: FM-V/M/O/IF. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN. Spec info: 62137301900

NPN transistor, 0.05A, 30 v. Collector current: 0.05A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Note: hFE 350...700. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN. Spec info: 0501-000394

NPN transistor, 150mA, TO-92, TO-92, 50V. Collector current: 150mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Pinout: 1. C(in): 1.5pF. Cost): 11pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V. Spec info: complementary transistor (pair) KSA733. BE diode: no. CE diode: no

NPN transistor, 150mA, TO-92, TO-92, 50V. Collector current: 150mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Pinout: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V. Spec info: complementary transistor (pair) KSA733. BE diode: no. CE diode: no

NPN transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no

NPN transistor, 5A, TO-3PML, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 5A. Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Vebo: 6V. Spec info: Rbe 50 Ohms

NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: 0.1...0.3us

NPN transistor, 5A, 100V. Collector current: 5A. Collector/emitter voltage Vceo: 100V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Spec info: 12149-401-070

NPN transistor, 3A, TO-126F, TO-126F, 30 v. Collector current: 3A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 30 v. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: SD882-Y

NPN transistor, 12A, TO-220FP, TO-220F, 400V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 400V. Cost): 180pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: 'High Voltage Switch Mode'. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no

NPN transistor, 4A, 60V. Collector current: 4A. Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: b>750. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Spec info: 0503-000001

NPN transistor, 600mA, TO-92, TO-92, 40V. Collector current: 600mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V. BE diode: no. CE diode: no

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Marking on the case: R1002. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 22k Ohms. BE resistor: 22k Ohms. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: SW. Marking on the case: R1003. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 50V. Vebo: 10V. BE diode: no. CE diode: no

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Marking on the case: R1007. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V. BE diode: no. CE diode: no

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. Function: S. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. Function: S. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. Function: S. Note: 0.3W. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, TO-92, TO-92. Housing: TO-92. Housing (according to data sheet): TO-92. Cost): 0.8pF. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, 20mA, TO-92, TO-92, 30 v. Collector current: 20mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 800 MHz. Function: FM-V/M/O. Max hFE gain: 198. Minimum hFE gain: 40. Marking on the case: 15.8k Ohms. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Vebo: 4 v. BE diode: no. CE diode: no

NPN transistor, 3A, 80V. Collector current: 3A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: hFE 20...90. Note: T32. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 120V. BE diode: no. CE diode: no

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 80V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 80V. Cost): 0.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 11 MHz. Function: S-L. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 210V. BE diode: no. CE diode: no

NPN transistor, 10A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 10A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 0.55pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 7.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.25us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no