NPN bipolar transistors

NPN transistor, 10A, TO-220, TO-220, 80V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 130pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Minimum hFE gain: 60. Ic(pulse): 20A. Marking on the case: D44H11. Equivalents: Fairchild D44H11TU, KSE44H11TU. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) D45H11. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Tf(max): 140 ns. Tf(min): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, PCB soldering, TO-220, 10A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D44H11G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 10A, TO-220, TO-220, 60V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. RoHS: no. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D44H8. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Type of transistor: NPN. Maximum saturation voltage VCE(sat): 1V

NPN transistor, PCB soldering, TO-220, 10A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D44H8G. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 15A, TO-220, TO-220AC, 80V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 80V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: S-L, Low-sat. Max hFE gain: 35. Minimum hFE gain: 20. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. Spec info: complementary transistor (pair) D45VH10. Assembly/installation: PCB through-hole mounting. Tf(max): 90 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 7V

NPN transistor, 50mA, SOT-23 ( TO-236 ), SC-59, 50V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SC-59. Collector/emitter voltage Vceo: 50V. Resistor B: 10k Ohms. BE diode: no. BE resistor: 10k Ohms. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: DTR.. Ic(pulse): 100mA. Marking on the case: 24. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Spec info: screen printing/SMD code 24. Assembly/installation: surface-mounted component (SMD). Power: 0.2W. Type of transistor: NPN. Vcbo: 50V

NPN transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 200. Note: screen printing/SMD code 33. Marking on the case: *33, P33, t33, w33. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: R1 typ=4.7k Ohms, R2 typ=NC (open). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Production date: 2014/49. Minimum hFE gain: 100. Ic(pulse): 100mA. Marking on the case: 18. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 10V

NPN transistor, 0.03A, SOT-23 ( TO-236 ), SOT-23, 50V. Collector current: 0.03A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 50V. Resistor B: 47k Ohms. BE diode: no. BE resistor: 47k Ohms. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Marking on the case: 26. Spec info: screen printing/SMD code 26. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, 0.1A, SC-72. Collector current: 0.1A. Housing: SC-72. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.3W. BE resistor: 47k+22k Ohms. Max frequency: 250MHz

NPN transistor, 100A, ISOPLUS247 ( TO-247 ), ISOTOP ( SOT-227 ), 400V. Collector current: 100A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Collector/emitter voltage Vceo: 400V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Power Darlington NPN Transistor Module. Max hFE gain: 300. Minimum hFE gain: 300. Ic(pulse): 150A. Note: Screwed. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 225W. RoHS: yes. Spec info: Single Dual Emitter. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.35us. Type of transistor: NPN & NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1.25V. Vebo: 7V

NPN transistor, ISOTOP, 84A. Housing: ISOTOP. Collector current Ic [A], max.: 84A. RoHS: yes. Component family: Darlington NPN Power Transistor. Configuration: Screwed. Number of terminals: 4. Manufacturer's marking: ESM6045DV. Collector-emitter voltage Uceo [V]: 450V. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 750V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 20A. Note: screen printed . Marking on the case: J6810. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: High Switching Speed--tF(typ.)=0.1uS. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 750V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High-speed switching. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 750V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High V Color Display Hor Defl (with Damper Diode)'. Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 20A. Note: screen printed J6810. Marking on the case: J6810D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: High Switching Speed--tF(typ.)=0.1uS. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 750V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 24A. Note: screen printed J6812. Marking on the case: J6812. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: High Switching Speed--tF(typ.)=0.1uS. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 17A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: J4315O. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) FJL4215-O. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, 20A, TO-247, TO-247, 750V. Collector current: 20A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 750V. Quantity per case: 1. Semiconductor material: silicon. Function: 19 inch monitor. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Spec info: VEBO 6V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V

NPN transistor, 20A, TO-264 ( TOP-3L ), TO-264, 800V. Collector current: 20A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 800V. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Ic(pulse): 300mA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: SAMSUNG 0504-000117. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 10V

NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 60. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: J13007. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 16A. Marking on the case: J13007-1. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 39. Minimum hFE gain: 26. Ic(pulse): 16A. Marking on the case: J13007-2. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 17. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: J13009. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 24A. Marking on the case: J13009-2. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V