NPN bipolar transistors

NPN transistor, 6A, TO-220, TO-220, 450V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: high voltage, high speed. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 12A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 8A, TO-220, TO-220, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 4A, 350V. Collector current: 4A. Collector/emitter voltage Vceo: 350V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Function: S-L, SN. Pd (Power Dissipation, Max): 55W. Type of transistor: NPN. Vcbo: 600V

NPN transistor, PCB soldering, TO-3, 50A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 50A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUV20. Collector-emitter voltage Uceo [V]: 125V. Cutoff frequency ft [MHz]: 8 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 20A, TO-220, TO-220 CASE 221A, 190V. Collector current: 20A. Housing: TO-220. Housing (according to data sheet): TO-220 CASE 221A. Collector/emitter voltage Vceo: 190V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Designed for high-speed applications. Ic(pulse): 30A. Pd (Power Dissipation, Max): 85W. RoHS: yes. Tf(max): 150 ns. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.6V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 7V

NPN transistor, 12A, TO-220, TO-220AB, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Fast Switching Speed. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: VCE(sat) 0.7V...1.5V. Assembly/installation: PCB through-hole mounting. Tf(max): 250 ns. Tf(min): 120ns. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 240V. Saturation voltage VCE(sat): 0.7V. Vebo: 7V

NPN transistor, 15A, 150V. Collector current: 15A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 85W. Type of transistor: NPN. Vcbo: 300V

NPN transistor, TO-247, 15A, TO-247, 450V, 1000V, 15A. Housing: TO-247. Collector current Ic [A], max.: 15A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 450V. Collector-Emitter Voltage VCEO: 1000V. Collector current: 15A. RoHS: yes. Number of terminals: 3. Manufacturer's marking: BUV48A. Collector-emitter voltage Uceo [V]: 450V. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 8. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Spec info: ICP--55Ap (tp< 20us). Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.4us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 7V. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching

NPN transistor, 5A, 400V. Collector current: 5A. Collector/emitter voltage Vceo: 400V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, 5A, TO-3PN, 450V. Collector current: 5A. Housing: TO-3PN. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: high voltage, fast-switching. Max hFE gain: 35. Minimum hFE gain: 10. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 5A, 400V. Collector current: 5A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 32W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, 10A, TO-247, TO-247, 450V. Collector current: 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 50. Minimum hFE gain: 15. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 10A, 400V. Collector current: 10A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 32W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, 15A, TO-3PN, 400V. Collector current: 15A. Housing: TO-3PN. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 175W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, PCB soldering, TO-3, 15A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX48A. Collector-emitter voltage Uceo [V]: 450V. Maximum dissipation Ptot [W]: 175W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 2A, 400V. Collector current: 2A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Function: S. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 450V

NPN transistor, PCB soldering, TO-220, 2A, TO-220, 450V. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 2A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX85G. Collector-emitter voltage Uceo [V]: 450V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.8V. Maximum saturation voltage VCE(sat): 1V

NPN transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-126, 450V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: S-L. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Resistor B: Power Transistor. BE diode: NPN. BE resistor: switching. C(in): 1000V. Cost): 0.5A. CE diode: 40W

NPN transistor, PCB soldering, TO-126, 500mA. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): SOT-82. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX87P. Collector-emitter voltage Uceo [V]: 450V. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 25 MHz. Function: S-L. Minimum hFE gain: 20. Ic(pulse): 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V

NPN transistor, 2A, 800V. Collector current: 2A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 2200V

NPN transistor, 10A, 200V. Collector current: 10A. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 280V

NPN transistor, 400V, 8A, TO-220AB (MJE13007). Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Housing: TO-220AB (MJE13007). Type of transistor: Power Transistor. Polarity: NPN. Power: 80W. Max frequency: 4MHz