NPN bipolar transistors

NPN transistor, 0.1A, TO-126F, TO-126ML, 160V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) HSB1109

NPN transistor, 500mA, TO-5, TO-5, 75V. Collector current: 500mA. Housing: TO-5. Housing (according to data sheet): TO-5. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 35...125. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: Lo-Pwr BJT

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: NPN. Spec info: TO-92M

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: NPN. Spec info: TO-92M

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: NPN. Spec info: TO-92M

NPN transistor, 0.7A, 140V. Collector current: 0.7A. Collector/emitter voltage Vceo: 140V. Cost): 2.6pF. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 0.8W. Type of transistor: NPN. Vcbo: 160V. BE diode: no. CE diode: no

NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: C1507 O. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 7V. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. CE diode: yes

NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C1507 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 7V. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. CE diode: yes

NPN transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Collector/emitter voltage Vceo: 120V. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI audio amplifier. Max hFE gain: 600. Minimum hFE gain: 300. Marking on the case: C1845. Equivalents: 2SC1845. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) KSA992. BE diode: no. CE diode: no

NPN transistor, 0.7A, TO-92, TO-92, 30 v. Collector current: 0.7A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. CE diode: yes

NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) KSA940. BE diode: no. CE diode: no

NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) KSA940. BE diode: no. CE diode: no

NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: C2310 O. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no

NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no

NPN transistor, 2A, 30 v. Collector current: 2A. Collector/emitter voltage Vceo: 30 v. Resistor B: 10. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Pd (Power Dissipation, Max): 1W. Type of transistor: NPN. Spec info: TO-92M (hauteur 9mm). BE diode: no. CE diode: no

NPN transistor, 0.1A, TO-92, TO-92M ( 9mm ), 300V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 300V. Resistor B: 10. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: 0501-000367. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: 9mm height. BE diode: no. CE diode: no

NPN transistor, 0.7A, TO-92, TO-92L ( SC-51 ) ( 9mm ), 60V. Collector current: 0.7A. Housing: TO-92. Housing (according to data sheet): TO-92L ( SC-51 ) ( 9mm ). Collector/emitter voltage Vceo: 60V. Cost): 60pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 120...240. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V

NPN transistor, 3A, TO-220, TO-220, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. Cost): 60pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 10A. Marking on the case: KSC5027 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V. BE diode: no. CE diode: no

NPN transistor, 3A, TO-220FP, TO-220F, 800V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 800V. Cost): 60pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.5us. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 7V. BE diode: no. CE diode: yes

NPN transistor, 0.1A, TO-126, 900V, TO-126 (TO-225, SOT-32). Collector current: 0.1A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 900V. Housing: TO-126 (TO-225, SOT-32). BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. Function: Dyn Focus. Pd (Power Dissipation, Max): 4W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: HV switch. BE diode: no. CE diode: yes

NPN transistor, 8A, 800V. Collector current: 8A. Collector/emitter voltage Vceo: 800V. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. BE diode: no. CE diode: yes

NPN transistor, 7A, TO-3PF, 800V, TO-3PF (SOT399). Collector current: 7A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399). BE resistor: 10. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Switching 0.1us. Max hFE gain: 22. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: C5386. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 4.2V. Vebo: 6V. Spec info: VEBO 6V. BE diode: no. CE diode: yes

NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA (F). Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: Monitor 68KHz. BE diode: no. CE diode: no

NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 90pF. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA (F). Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: Rbe 50 Ohms, monitor 69kHz. BE diode: no. CE diode: no

NPN transistor, 12A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA (F). Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 24A. Marking on the case: C5803. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Spec info: For C-Monitor (85KHz). BE diode: no. CE diode: no