NPN bipolar transistors

NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21193. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, 250V, 16A, TO-264. Collector-Emitter Voltage VCEO: 250V. Collector current: 16A. Housing: TO-264. Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Power: 200W

NPN transistor, 16A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) MJL21195. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL1302A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V

Housing: TO264. Assembly/installation: THT. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 260V. Collector current Ic [A]: 15A. Conditioning: tubus. Power dissipation: 200W. Power: 200W

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 350V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 350V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: Power audio, Low Harmonic Distortion. Max hFE gain: 250. Minimum hFE gain: 50. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: complementary transistor (pair) MJL4302A. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 16A, TO-247, TO-247, 400V. Collector current: 16A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Max hFE gain: 80. Minimum hFE gain: 20. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW21195. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 2.8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW1302A. Assembly/installation: PCB through-hole mounting. Technology: Power Bipolar Transistor. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, SOT23, 40V. Housing: SOT23. Collector-Emitter Voltage VCEO: 40V. Type: transistor for low power applications. Polarity: NPN. Power: 0.25W. Collector-Base Voltage VCBO: 75V. Mounting Type: SMD. Bandwidth MHz: 250MHz. DC Collector/Base Gain hFE min.: 30. Current Max 1: 0.6A

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 75V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 75V. BE diode: no. Cost): 5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: UNI. Minimum hFE gain: 100. Marking on the case: 1 P. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: SMD 1P. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 40V

NPN transistor, PCB soldering (SMD), SOT-23, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1P. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 200mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1S. Collector-emitter voltage Uceo [V]: 15V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Spec info: SMD '2F'. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-23, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 200mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1AM. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 200mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1AM. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 80pF. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 20. Ic(pulse): 0.9A. Marking on the case: 2x. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/CMS code 2X. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 6V

NPN transistor, PCB soldering (SMD), SOT-23, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 150V. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 150V. RoHS: yes. Component family: PNP transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Collector-emitter voltage Uceo [V]: 150V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Marking on the case: 2 L. Equivalents: MMBT5401LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Spec info: screen printing/SMD code (2Lx Date Code). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/SMD code G1 (3S Fairchild). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V

NPN transistor, PCB soldering (SMD), SOT-23, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: G1. Collector-emitter voltage Uceo [V]: 160V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 300V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Spec info: complementary transistor (pair) MMBTA92. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1D. Collector-emitter voltage Uceo [V]: 300V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 5mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 5mA. RoHS: no. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3EM. Collector-emitter voltage Uceo [V]: 25V. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 1.5A, SOT-23 ( TO-236 ), SOT-23, 25V. Collector current: 1.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 350. Minimum hFE gain: 200. Marking on the case: Y1. Pd (Power Dissipation, Max): 0.3W. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V